公开(公告)号：US08158512B2

公开(公告)日：2012-04-17

申请号：US12141040

申请日：2008-06-17

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Sean Fuxiong Zhang

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Sean Fuxiong Zhang

IPC分类号： H01L21/203

CPC分类号： C23C16/45529 ,  H01L21/28282 ,  H01L29/1608 ,  H01L29/42348 ,  H01L29/792

摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within a ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; forming a first dielectric layer to cover the discrete compound monolayer; forming a second third monolayer above first dielectric layer; and forming a second discrete compound monolayer; and forming a second dielectric layer to cover the second discrete compound monolayer above the first dielectric layer. There is also provided a semiconductor device formed by the ALD method.

摘要翻译： 提供一种制造半导体器件的方法，包括以下步骤：在ALD室内使第一前体气体流到半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 形成第一电介质层以覆盖离散化合物单层; 在第一介电层上形成第二第三单层; 并形成第二离散化合物单层; 以及形成第二电介质层以覆盖所述第一电介质层上方的所述第二离散化合物单层。 还提供了通过ALD方法形成的半导体器件。