公开(公告)号：US08158512B2

公开(公告)日：2012-04-17

申请号：US12141040

申请日：2008-06-17

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Sean Fuxiong Zhang

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Sean Fuxiong Zhang

IPC分类号： H01L21/203

CPC分类号： C23C16/45529 ,  H01L21/28282 ,  H01L29/1608 ,  H01L29/42348 ,  H01L29/792

摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within a ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; forming a first dielectric layer to cover the discrete compound monolayer; forming a second third monolayer above first dielectric layer; and forming a second discrete compound monolayer; and forming a second dielectric layer to cover the second discrete compound monolayer above the first dielectric layer. There is also provided a semiconductor device formed by the ALD method.

摘要翻译： 提供一种制造半导体器件的方法，包括以下步骤：在ALD室内使第一前体气体流到半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 形成第一电介质层以覆盖离散化合物单层; 在第一介电层上形成第二第三单层; 并形成第二离散化合物单层; 以及形成第二电介质层以覆盖所述第一电介质层上方的所述第二离散化合物单层。 还提供了通过ALD方法形成的半导体器件。

公开(公告)号：US07709386B2

公开(公告)日：2010-05-04

申请号：US12141045

申请日：2008-06-17

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

IPC分类号： H01L21/44

CPC分类号： H01L21/0228 ,  C23C16/45529 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/318 ,  H01L21/3185 ,  H01L27/11563

摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within the ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; and forming a second discrete compound monolayer above the semiconductor substrate by the same process as that for forming the first discrete compound monolayer. There is also provided a semiconductor device in which the charge trapping layer is a dielectric layer containing the first and second discrete compound monolayers formed by the ALD method.

摘要翻译： 提供了一种制造半导体器件的方法，包括以下步骤：将第一前体气体流到ALD室内的半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 以及通过与形成第一离散化合物单层相同的方法在半导体衬底上方形成第二离散化合物单层。 还提供了一种半导体器件，其中电荷捕获层是包含通过ALD法形成的第一和第二离散化合物单层的介电层。

公开(公告)号：US20080315293A1

公开(公告)日：2008-12-25

申请号：US12141045

申请日：2008-06-17

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

IPC分类号： H01L21/28 ,  H01L29/792

CPC分类号： H01L21/0228 ,  C23C16/45529 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31645 ,  H01L21/318 ,  H01L21/3185 ,  H01L27/11563

摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within the ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; and forming a second discrete compound monolayer above the semiconductor substrate by the same process as that for forming the first discrete compound monolayer. There is also provided a semiconductor device in which the charge trapping layer is a dielectric layer containing the first and second discrete compound monolayers formed by the ALD method.

摘要翻译： 提供一种制造半导体器件的方法，包括以下步骤：将第一前体气体流到ALD室内的半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 以及通过与形成第一离散化合物单层相同的方法在半导体衬底上方形成第二离散化合物单层。 还提供了一种半导体器件，其中电荷捕获层是包含通过ALD法形成的第一和第二离散化合物单层的电介质层。

公开(公告)号：US08273639B2

公开(公告)日：2012-09-25

申请号：US12132459

申请日：2008-06-03

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

IPC分类号： H01L21/20

CPC分类号： C23C16/04 ,  C23C16/45527 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/3185

摘要： Disclosed are atomic layer deposition method and a semiconductor device including the atomic layer, including the steps: placing a semiconductor substrate in an atomic layer deposition chamber; feeding a first precursor gas to the semiconductor substrate within the chamber to form a first discrete monolayer on the semiconductor substrate; feeding an inert purge gas to the semiconductor substrate within the chamber to remove the first precursor gas which has not formed the first discrete monolayer on the semiconductor substrate; feeding a second precursor gas to the chamber to react with the first precursor gas which has formed the first discrete monolayer, forming a discrete atomic size islands; and feeding an inert purge gas to the semiconductor substrate within the chamber to remove the second precursor gas which has not reacted with the first precursor gas and byproducts produced by the reaction between the first and the second precursor gases.

摘要翻译： 公开了原子层沉积方法和包括原子层的半导体器件，包括以下步骤：将半导体衬底放置在原子层沉积室中; 将第一前体气体供给到腔室内的半导体衬底，以在半导体衬底上形成第一离散单层; 向腔室内的半导体衬底供给惰性清洗气体以去除在半导体衬底上未形成第一离散单层的第一前体气体; 将第二前体气体供给到所述室中以与形成所述第一离散单层的所述第一前体气体反应，形成离散的原子尺寸岛; 以及将惰性吹扫气体供给到室内的半导体衬底以除去未与第一前体气体反应的第二前体气体和由第一和第二前体气体之间的反应产生的副产物。

公开(公告)号：US20120168853A1

公开(公告)日：2012-07-05

申请号：US13419943

申请日：2012-03-14

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Seanfuxiong Zhang

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Seanfuxiong Zhang

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  C23C16/45529 ,  H01L29/1608 ,  H01L29/40117 ,  H01L29/42348

摘要： A semiconductor non-volatile memory (NVM) device, comprising: a semiconductor substrate; a three-layer stack structure of medium layer-charge trapping layer-medium layer disposed on the semiconductor substrate; a gate disposed above the three-layer stack structure; a source and a drain disposed in the semiconductor substrate at either side of the three-layer stack structure; wherein the charge trapping layer is a dielectric layer containing one or more discrete compound clusters formed by atomic layer deposition (ALD) method.

摘要翻译： 一种半导体非易失性存储器（NVM）器件，包括：半导体衬底; 设置在半导体衬底上的中层电荷俘获层 - 介质层的三层堆叠结构; 设置在三层堆叠结构上方的栅极; 在三层堆叠结构的任一侧设置在半导体衬底中的源极和漏极; 其中电荷捕获层是包含通过原子层沉积（ALD）方法形成的一个或多个离散化合物簇的电介质层。

公开(公告)号：US20080315295A1

公开(公告)日：2008-12-25

申请号：US12132459

申请日：2008-06-03

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno

IPC分类号： H01L29/792 ,  H01L21/311

CPC分类号： C23C16/04 ,  C23C16/45527 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/3185

摘要： Disclosed are atomic layer deposition method and a semiconductor device including the atomic layer, including the steps: placing a semiconductor substrate in an atomic layer deposition chamber; feeding a first precursor gas to the semiconductor substrate within the chamber to form a first discrete monolayer on the semiconductor substrate; feeding an inert purge gas to the semiconductor substrate within the chamber to remove the first precursor gas which has not formed the first discrete monolayer on the semiconductor substrate; feeding a second precursor gas to the chamber to react with the first precursor gas which has formed the first discrete monolayer, forming a discrete atomic size islands; and feeding an inert purge gas to the semiconductor substrate within the chamber to remove the second precursor gas which has not reacted with the first precursor gas and byproducts produced by the reaction between the first and the second precursor gases.

摘要翻译： 公开了原子层沉积方法和包括原子层的半导体器件，包括以下步骤：将半导体衬底放置在原子层沉积室中; 将第一前体气体供给到腔室内的半导体衬底，以在半导体衬底上形成第一离散单层; 向腔室内的半导体衬底供给惰性清洗气体以去除在半导体衬底上未形成第一离散单层的第一前体气体; 将第二前体气体供给到所述室中以与形成所述第一离散单层的所述第一前体气体反应，形成离散的原子尺寸岛; 以及将惰性吹扫气体供给到室内的半导体衬底以除去未与第一前体气体反应的第二前体气体和由第一和第二前体气体之间的反应产生的副产物。

公开(公告)号：US20080315292A1

公开(公告)日：2008-12-25

申请号：US12141040

申请日：2008-06-17

申请人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Seanfuxiong Zhang

发明人： Hua Ji ,  Min-Hwa Chi ,  Fumitake Mieno ,  Seanfuxiong Zhang

IPC分类号： H01L21/28 ,  H01L29/792

CPC分类号： C23C16/45529 ,  H01L21/28282 ,  H01L29/1608 ,  H01L29/42348 ,  H01L29/792

摘要： There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within a ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert purge gas to the semiconductor substrate within the ALD chamber; flowing a second precursor gas to the ALD chamber to react with the first precursor gas which has formed the first monolayer, thereby forming a first discrete compound monolayer; and flowing an inert purge gas; forming a first dielectric layer to cover the discrete compound monolayer; forming a second third monolayer above first dielectric layer; and forming a second discrete compound monolayer; and forming a second dielectric layer to cover the second discrete compound monolayer above the first dielectric layer. There is also provided a semiconductor device formed by the ALD method.

摘要翻译： 提供一种制造半导体器件的方法，包括以下步骤：在ALD室内使第一前体气体流到半导体衬底，以在半导体衬底上形成第一离散单层; 将惰性吹扫气体流入ALD室内的半导体衬底; 使第二前体气体流到ALD室以与形成第一单层的第一前体气体反应，从而形成第一离散化合物单层; 并流动惰性吹扫气体; 形成第一电介质层以覆盖离散化合物单层; 在第一介电层上形成第二第三单层; 并形成第二离散化合物单层; 以及形成第二电介质层以覆盖所述第一电介质层上方的所述第二离散化合物单层。 还提供了通过ALD方法形成的半导体器件。

公开(公告)号：US06924542B2

公开(公告)日：2005-08-02

申请号：US10901948

申请日：2004-07-29

申请人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

发明人： Hua Ji ,  Dong Jun Kim ,  Jin-Ho Kim ,  Chuck Jang

IPC分类号： H01L21/762 ,  H01L29/00 ,  H01L21/8238

CPC分类号： H01L21/76229

摘要： A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

公开(公告)号：US20120043886A1

公开(公告)日：2012-02-23

申请号：US13098797

申请日：2011-05-02

申请人： Hua Ji ,  Robert Nail Lee

发明人： Hua Ji ,  Robert Nail Lee

IPC分类号： H01J7/44 ,  H01J7/24

CPC分类号： H01L25/0753 ,  H01L33/60 ,  H01L33/641 ,  H01L2224/48091 ,  H05K1/021 ,  H05K2201/10106 ,  H01L2924/00014

摘要： This invention discloses a new and advanced light emitting diodes (LEDs) light source module, and more specifically surface mounting LED dice and/or driver circuits on a slim linear Silicon wafer to provide superior heat dissipation capability through eutectic bonding onto a small Silicon base and the overall performance/cost ratio of the LED white light source module by an advanced integrated.

摘要翻译： 本发明公开了一种新型和先进的发光二极管（LED）光源模块，更具体地说，在薄型线性硅晶片上表面安装LED芯片和/或驱动电路，以通过共晶接合到小硅基底上提供优异的散热能力， LED白光源模块的整体性能/成本比先进集成。

公开(公告)号：US20060051951A1

公开(公告)日：2006-03-09

申请号：US11169154

申请日：2005-06-27

申请人： Amalkumar Ghosh ,  Yachin Liu ,  Hua Ji

发明人： Amalkumar Ghosh ,  Yachin Liu ,  Hua Ji

IPC分类号： H01L21/44 ,  H01L21/302

CPC分类号： H01L21/02098 ,  H01L24/05 ,  H01L24/85 ,  H01L27/3297 ,  H01L2224/8501 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A process of cleaning wire bond pads associated with OLED devices, including the steps of depositing on the wire bond pads one or more layers of ablatable material, and ablating the one or more layers with a laser, thereby exposing a clean wire bond pad.

摘要翻译： 清洁与OLED器件相关联的引线接合焊盘的过程，包括以下步骤：在引线接合焊盘上沉积一层或多层可消融材料，以及用激光烧蚀一层或多层，从而暴露清洁的焊线焊盘。