Complementary Ring Oscillators to Monitor In-Situ Stress Within Integrated Circuits

    公开(公告)号:US20210310880A1

    公开(公告)日:2021-10-07

    申请号:US17351675

    申请日:2021-06-18

    Inventor: Shigun Gu Hong Liu

    Abstract: The disclosure relates to technology for determining stress on integrated circuits. These include using ring oscillators formed on the integrated circuit, where one ring oscillator has its frequency dependent on the current flowing through its stages being limited by its NMOS devices and another ring oscillator has its frequency dependent on the current flowing through its stages being limited by its PMOS devices. This allows the stress on the integrated circuit to be determined in different directions along the integrated circuit. A temperature sensor can be used to compensate for temperature dependence on the frequencies of the ring oscillators.

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