公开(公告)号：US20240136495A1

公开(公告)日：2024-04-25

申请号：US18547323

申请日：2022-02-22

申请人： PULSEDEON OY

发明人： Ville KEKKONEN ,  Jari LIIMATAINEN

IPC分类号： H01M4/04 ,  C23C14/08 ,  C23C14/18 ,  C23C14/20 ,  C23C14/28 ,  C23C14/56 ,  C23C14/58 ,  C23C16/40 ,  C23C28/00 ,  H01G11/06 ,  H01G11/50 ,  H01G11/86 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562

CPC分类号： H01M4/0423 ,  C23C14/08 ,  C23C14/18 ,  C23C14/20 ,  C23C14/28 ,  C23C14/562 ,  C23C14/5806 ,  C23C16/40 ,  C23C28/322 ,  C23C28/345 ,  H01G11/06 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0407 ,  H01M4/0471 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/382 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2004/027

摘要： A method for manufacturing a component of an electrochemical energy storage device utilizes lithium such that a coating method based on pulsed laser ablation is utilized in the production of an ion-conducting inorganic material layer on at least one surface of a lithium metal anode. At least one material layer is processed by thermal, mechanical, or thermomechanical treatment or by combination of any of these treatments after pulsed laser deposition. A roll-to-roll method can be used in the deposition, in which the substrate to be coated is directed from one roll to the second roll, and the deposition takes place in the area between the rolls. Moving and/or turning mirrors can be used to direct laser pulses as a beam line array to the surface of the target material.

公开(公告)号：US20240105421A1

公开(公告)日：2024-03-28

申请号：US17950960

申请日：2022-09-22

申请人： APPLIED MATERIALS ISRAEL LTD.

发明人： Yehuda Zur

IPC分类号： H01J37/317 ,  C23C14/04 ,  C23C14/18 ,  C23C14/22 ,  H01J37/147 ,  H01J37/30 ,  H01L21/285

CPC分类号： H01J37/3178 ,  C23C14/048 ,  C23C14/18 ,  C23C14/221 ,  H01J37/1474 ,  H01J37/3005 ,  H01L21/28568 ,  H01J2237/006 ,  H01J2237/31749

摘要： A method of depositing material over a localized region of a sample comprising: positioning a sample within a vacuum chamber such that the localized region is under a field of view of a charged particle beam column; injecting a deposition precursor gas, with a gas injection nozzle, into the vacuum chamber at a location adjacent to the deposition region; generating a charged particle beam with the charged particle beam column and focusing the charged particle beam within the deposition region of the sample; and scanning the charged particle beam across the deposition region of the sample to activate molecules of the deposition gas that have adhered to the sample surface in the deposition region and deposit material on the sample within the deposition region; and applying a negative bias voltage to the gas injection nozzle while the focused ion beam is scanned across the deposition region to alter a trajectory of the secondary electrons and repel the secondary electrons back to the sample surface.

公开(公告)号：US11943994B2

公开(公告)日：2024-03-26

申请号：US17404004

申请日：2021-08-17

申请人： Samsung Display Co., Ltd.

发明人： Chul Min Bae ,  Eun Jin Kwak ,  Jin Suk Lee ,  Jung Yun Jo ,  Ji Hye Han ,  Young In Hwang

IPC分类号： H10K77/10 ,  C23C14/18 ,  C23C16/34 ,  C23C16/40 ,  C23C28/00 ,  G09G3/3233 ,  H10K50/844 ,  H10K59/12 ,  H10K71/00 ,  H10K71/80

CPC分类号： H10K77/111 ,  C23C14/18 ,  C23C16/345 ,  C23C16/401 ,  C23C28/30 ,  H10K50/844 ,  H10K59/12 ,  H10K71/00 ,  H10K71/80 ,  G09G3/3233 ,  G09G2300/0443 ,  G09G2300/0809 ,  H10K59/1201

摘要： A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

公开(公告)号：US20230326791A1

公开(公告)日：2023-10-12

申请号：US17718242

申请日：2022-04-11

申请人： Applied Materials, Inc.

发明人： Zhimin QI ,  Yi XU ,  Shirish A. PETHE ,  Xingyao GAO ,  Shiyu YUE ,  Aixi ZHANG ,  Wei LEI ,  Yu LEI ,  Geraldine VASQUEZ ,  Dien-yeh WU ,  Da HE

IPC分类号： H01L21/768 ,  H01L21/285 ,  C23C14/18 ,  C23C16/14

CPC分类号： H01L21/76879 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/28568 ,  C23C14/18 ,  C23C16/14

摘要： Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

公开(公告)号：US20230317854A1

公开(公告)日：2023-10-05

申请号：US18086597

申请日：2022-12-21

申请人： MIANYANG HKC OPTOELECTRONICS TECHNOLOGY CO.,LTD ,  HKC CORPORATION LIMITED

发明人： RONG TANG ,  Rongrong LI

IPC分类号： H01L29/786 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1333 ,  C23C14/24 ,  C23C14/18

CPC分类号： H01L29/78633 ,  H01L27/1259 ,  G02F1/13685 ,  G02F1/136209 ,  G02F1/133382 ,  C23C14/24 ,  C23C14/18 ,  G02F2202/36

摘要： An array substrate, a display device, and a fabricating method are disclosed. The array substrate includes a substrate and a thin film transistor disposed on the substrate. The thin film transistor includes a semiconductor layer, and further includes a light-shielding and heat-insulating layer, where the semiconductor layer is disposed above the light-shielding and heat-insulating layer. The light-shielding and heat-insulating layer includes a light-shielding matrix and a flake-shaped cluster structure. The light-shielding matrix includes a porous structure, the porous structure including multiple holes, and the flake-shaped cluster structure is disposed in these holes. The light-shielding and heat-insulating layer is used to shield incident light, and the flake-shaped cluster structure is used to absorb heat generated by the incident light.

公开(公告)号：US20230272547A1

公开(公告)日：2023-08-31

申请号：US18304200

申请日：2023-04-20

申请人： Applied Materials, Inc.

发明人： Jing Xu ,  John L. Klocke ,  Marvin L. Bernt ,  Eric J. Bergman ,  Kwan Wook Roh

IPC分类号： C25D3/38 ,  C25D5/54 ,  C25D5/02 ,  H01L21/288 ,  C23C14/18 ,  H01L21/28 ,  H01L21/768 ,  C23C16/455

CPC分类号： C25D3/38 ,  C25D5/54 ,  C25D5/02 ,  H01L21/2885 ,  C23C14/18 ,  H01L21/28114 ,  H01L21/76873 ,  C23C16/45525

摘要： Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

公开(公告)号：US11694899B2

公开(公告)日：2023-07-04

申请号：US16896591

申请日：2020-06-09

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chun-Hsu Yang ,  Chun-Sheng Chen ,  Nai-Hao Yang ,  Kuan-Chia Chen ,  Huei-Wen Hsieh ,  Yu-Cheng Hsiao ,  Che-Wei Tien

IPC分类号： H01L21/285 ,  H01J37/34 ,  H01L21/768 ,  H01J37/32 ,  C23C14/18 ,  C23C14/34 ,  H01L21/321

CPC分类号： H01L21/28568 ,  C23C14/18 ,  C23C14/34 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/3426 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76853 ,  H01L21/76877 ,  H01L21/76882 ,  H01J2237/002 ,  H01J2237/332

摘要： Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

公开(公告)号：US11655534B2

公开(公告)日：2023-05-23

申请号：US17857370

申请日：2022-07-05

申请人： APPLIED MATERIALS, INC.

发明人： Wenting Hou ,  Jianxin Lei ,  Jothilingam Ramalingam ,  Prashanth Kothnur ,  William R. Johanson

IPC分类号： H01J37/32 ,  C23C14/18 ,  C23C14/34 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

CPC分类号： C23C14/18 ,  C23C14/14 ,  C23C14/16 ,  C23C14/3414 ,  C23C14/354 ,  H01J37/32027 ,  H01J37/32082

摘要： Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US10007176B2

公开(公告)日：2018-06-26

申请号：US15356386

申请日：2016-11-18

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chih-Chiang Tu ,  Chun-Lang Chen

IPC分类号： G03F1/62 ,  G03F1/64 ,  H01L21/033 ,  C23C14/18 ,  C23C16/26 ,  C23C28/00 ,  C23C14/16

CPC分类号： G03F1/62 ,  C23C14/16 ,  C23C14/165 ,  C23C14/18 ,  C23C16/01 ,  C23C16/26 ,  C23C16/56 ,  C23C28/32 ,  G03F1/64 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

摘要： A method includes depositing a first material layer over a substrate; and depositing a graphene layer over the first material layer, thereby forming a first assembly. The method further includes attaching a carrier to the graphene layer; removing the substrate from the first assembly; and removing the first material layer from the first assembly.

公开(公告)号：US20180145254A1

公开(公告)日：2018-05-24

申请号：US15873584

申请日：2018-01-17

申请人： Micron Technology, Inc.

发明人： Christopher W. Petz ,  Yongjun Jeff Hu ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy

IPC分类号： H01L45/00 ,  C23C14/06 ,  C23C16/455 ,  C23C16/40 ,  C23C16/36 ,  C23C16/34 ,  C23C14/34 ,  C23C14/18 ,  C23C14/08

CPC分类号： H01L45/1616 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/08 ,  C23C14/18 ,  C23C14/34 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/45525 ,  G11C13/0011 ,  G11C2213/51 ,  H01L23/5228 ,  H01L27/222 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/141 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L2924/1441

摘要： A resistive memory element comprises a first electrode, an active material over the first electrode, a buffer material over the active material and comprising longitudinally extending, columnar grains of crystalline material, an ion reservoir material over the buffer material, and a second electrode over the ion reservoir material. A memory cell, a memory device, an electronic system, and a method of forming a resistive memory element are also described.