公开(公告)号：US06784002B1

公开(公告)日：2004-08-31

申请号：US10176940

申请日：2002-06-21

申请人： Hui-Peng Wang ,  Kuo-Wei Lin ,  Hwei-Mei Yu ,  Ta-Yang Lin ,  Charles Tseng

发明人： Hui-Peng Wang ,  Kuo-Wei Lin ,  Hwei-Mei Yu ,  Ta-Yang Lin ,  Charles Tseng

IPC分类号： H01L2166

CPC分类号： H01L23/544 ,  H01L24/11 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/3025 ,  Y10S438/975 ,  H01L2224/0401

摘要： A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the fields. A dry film resist is formed over the wafer. Portions of the dry film resist are selectively exposed field by field using a mask whereby the mask is shifted over the one or more fields containing the at least one wafer identification character so that the one or more fields containing the at least one wafer identification character is double exposed after the mask shift so that all of the one or more fields containing the at least one wafer identification character is completely exposed. The selectively exposed dry film resist is developed to remove the non-exposed portions of the dry film resist. Solder is plated over the wafer exposed by the removed portions of the dry film resist to form solder bumps within the fields not containing at least one wafer identification character so that the at least one wafer identification character is readable by optical character recognition.

摘要翻译： 一种晶片凸块方法，包括以下步骤。 提供具有场的晶片。 该晶片在一个或多个场内形成有至少一个晶片识别字符。 在晶片上形成干膜抗蚀剂。 通过使用掩模场地使干膜抗蚀剂的部分选择性曝光，由此掩模在包含至少一个晶片识别字符的一个或多个场上移动，使得包含至少一个晶片识别字符的一个或多个场是 在掩模移位之后双曝光，使得包含至少一个晶片识别字符的所有一个或多个场完全暴露。 显影出选择性暴露的干膜抗蚀剂以除去干膜抗蚀剂的未曝光部分。 将焊料电镀在由干膜抗蚀剂的去除部分暴露的晶片上，以在不包含至少一个晶片识别字符的场内形成焊料凸块，使得至少一个晶片识别字符可通过光学字符识别来读取。