公开(公告)号：US06784002B1

公开(公告)日：2004-08-31

申请号：US10176940

申请日：2002-06-21

Applicant: Hui-Peng Wang ,  Kuo-Wei Lin ,  Hwei-Mei Yu ,  Ta-Yang Lin ,  Charles Tseng

Inventor： Hui-Peng Wang ,  Kuo-Wei Lin ,  Hwei-Mei Yu ,  Ta-Yang Lin ,  Charles Tseng

IPC: H01L2166

CPC classification number: H01L23/544 ,  H01L24/11 ,  H01L2223/54406 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/3025 ,  Y10S438/975 ,  H01L2224/0401

Abstract: A wafer bumping method comprising the following steps of. A wafer having fields is provided. The wafer having at least one wafer identification character formed thereon within one or more of the fields. A dry film resist is formed over the wafer. Portions of the dry film resist are selectively exposed field by field using a mask whereby the mask is shifted over the one or more fields containing the at least one wafer identification character so that the one or more fields containing the at least one wafer identification character is double exposed after the mask shift so that all of the one or more fields containing the at least one wafer identification character is completely exposed. The selectively exposed dry film resist is developed to remove the non-exposed portions of the dry film resist. Solder is plated over the wafer exposed by the removed portions of the dry film resist to form solder bumps within the fields not containing at least one wafer identification character so that the at least one wafer identification character is readable by optical character recognition.

Abstract translation: 一种晶片凸块方法，包括以下步骤。 提供具有场的晶片。 该晶片在一个或多个场内形成有至少一个晶片识别字符。 在晶片上形成干膜抗蚀剂。 通过使用掩模场地使干膜抗蚀剂的部分选择性曝光，由此掩模在包含至少一个晶片识别字符的一个或多个场上移动，使得包含至少一个晶片识别字符的一个或多个场是 在掩模移位之后双曝光，使得包含至少一个晶片识别字符的所有一个或多个场完全暴露。 显影出选择性暴露的干膜抗蚀剂以除去干膜抗蚀剂的未曝光部分。 将焊料电镀在由干膜抗蚀剂的去除部分暴露的晶片上，以在不包含至少一个晶片识别字符的场内形成焊料凸块，使得至少一个晶片识别字符可通过光学字符识别来读取。

公开(公告)号：US06696356B2

公开(公告)日：2004-02-24

申请号：US10038847

申请日：2001-12-31

Applicant: Li-Hsin Tseng ,  Hsiu-Mei Yu ,  Ta-Yang Lin ,  Fang-Chung Liu ,  Kai-Ming Ching ,  Tung-Heng Shie

Inventor： Li-Hsin Tseng ,  Hsiu-Mei Yu ,  Ta-Yang Lin ,  Fang-Chung Liu ,  Kai-Ming Ching ,  Tung-Heng Shie

IPC: H01L2144

CPC classification number: H01L24/05 ,  H01L24/02 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00014

Abstract: A method of forming a bump on a substrate such as a semiconductor wafer or flip chip without producing metal ribbon residue. The method includes the step of providing a semiconductor device having a contact pad and having an upper passivation layer and an opening formed in the upper passivation layer exposing a portion of the contact pad. An under bump metallurgy is deposited over the upper passivation layer and the contact pad. A photoresist layer is deposited over the under bump metallurgy. The photoresist layer is a dry film photoresist. The photoresist layer is patterned to provide an opening in the photoresist layers down to the under bump metallurgy and aligned with the contact pad. Additional energy is applied to the photoresist layer to improve the adhesion of the photoresist layer to the under bump metallurgy. An electrically conductive material is deposited into the opening formed in the photoresist layers and overlying the under bump metallurgy and aligned with contact pad. Thereafter the remaining portions of the photoresist layer are removed. The electrically conductive material is reflown to provide a bump on the semiconductor device.

Abstract translation: 在半导体晶片或倒装芯片等基板上形成凸块而不产生金属带残留物的方法。 该方法包括提供具有接触焊盘并具有上钝化层和形成在上钝化层中的开口的半导体器件的步骤，暴露接触焊盘的一部分。 在上钝化层和接触焊盘上沉积凸块下冶金。 光致抗蚀剂层沉积在凸块下的金属上。 光致抗蚀剂层是干膜光致抗蚀剂。 光致抗蚀剂层被图案化以在光致抗蚀剂层中提供直到下凸块冶金并且与接触垫对准的开口。 对光致抗蚀剂层施加额外的能量以提高光致抗蚀剂层对凸块下金属的粘合性。 将导电材料沉积在形成在光致抗蚀剂层中的开口中，并且覆盖凸块下方的金属并与接触焊盘对准。 此后，除去光致抗蚀剂层的其余部分。 导电材料被重熔以在半导体器件上提供凸块。

公开(公告)号：US06486054B1

公开(公告)日：2002-11-26

申请号：US10058472

申请日：2002-01-28

Applicant: Yang-Tung Fan ,  Hsiu-Mei Yu ,  Li-Hsin Tseng ,  Kuang-Peng Lin ,  Ta-Yang Lin

Inventor： Yang-Tung Fan ,  Hsiu-Mei Yu ,  Li-Hsin Tseng ,  Kuang-Peng Lin ,  Ta-Yang Lin

IPC: H01L2144

CPC classification number: H01L24/11 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/11472 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05552 ,  H01L2924/00014

Abstract: The present invention teaches how greater solder ball height can be achieved without the need to sacrifice areal density. The mold in which the solder is formed, is created in two steps. In a first exposure, a negative photoresist (preferably DFR) is patterned to form a conventional cylindrical mold. However, exposure and development time are adjusted in such a way that a layer of unexposed and undeveloped resist of reduced thickness remains covering the floor of the mold. This residual resist layer is given a second exposure and, after development, forms an annular insert in the bottom of the first mold. After the mold has been filled with solder (either through electroplating or by using solder paste) it is removed, the result being a solder bump made up of two contiguous coaxial cylinders the upper one having the larger diameter. After remelt, bumps having this shape form oblate spheroids rather than spheres.

Abstract translation: 本发明教导了如何在不需要牺牲面密度的情况下实现更大的焊球高度。 形成焊料的模具分两步制成。 在第一次曝光中，对负光致抗蚀剂（优选DFR）进行图案化以形成传统的圆柱形模具。 然而，曝光和显影时间被调整为使得厚度减小的未曝光和未显影的抗蚀剂层覆盖在模具的地板上。 该残余抗蚀剂层被给予第二曝光，并且在显影之后在第一模具的底部形成环形插入件。 在模具已经填充有焊料（通过电镀或通过使用焊膏）之后，它被去除，结果是由两个相邻的同轴圆柱体构成的焊料凸块，其中上部具有较大的直径。 重熔后，具有这种形状的凸起形成扁球体而不是球体。

公开(公告)号：US06941957B2

公开(公告)日：2005-09-13

申请号：US10621252

申请日：2003-07-16

Applicant: Kuo-Feng Chen ,  Hsiu-Mei Yu ,  Charles Tseng ,  Ta-Yang Lin

Inventor： Kuo-Feng Chen ,  Hsiu-Mei Yu ,  Charles Tseng ,  Ta-Yang Lin

IPC: H01L21/288 ,  H01L21/60 ,  H01L23/485 ,  B08B3/02

CPC classification number: H01L21/2885 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10S134/902 ,  H01L2924/00

Abstract: A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.

Abstract translation: 一种方法，包括提供具有接触焊盘的衬底和覆盖接触焊盘的下凸块冶金的步骤，以及覆盖凸块下金属的光致抗蚀剂层，并且其中光致抗蚀剂层具有限定在其下的凸起到下凸块冶金 并与接触垫对准。 在第一种润湿溶液镀覆第一种子层之前，先在底部凸起冶金上预处理基材。 此后，将第一种子层的电镀被镀在凸块下的金属上。

公开(公告)号：US06624060B2

公开(公告)日：2003-09-23

申请号：US10045782

申请日：2002-01-12

Applicant: Kuo-Feng Chen ,  Hsiu-Mei Yu ,  Charles Tseng ,  Ta-Yang Lin

Inventor： Kuo-Feng Chen ,  Hsiu-Mei Yu ,  Charles Tseng ,  Ta-Yang Lin

IPC: H01L2144

CPC classification number: H01L21/2885 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107 ,  Y10S134/902 ,  H01L2924/00

Abstract: A method including the step of providing a substrate having a contact pad, and an under bump metallurgy overlying the contact pad, and a photoresist layer overlying the under bump metallurgy, and wherein the photoresist layer has an opening defined therein down to the under bump metallurgy and aligned with the contact pad. Pretreating the substrate with the first wetting solution prior to plating a first seed layer over the under bump metallurgy. Thereafter, plating a first seed layer is plated onto the under bump metallurgy.

Abstract translation: 一种方法，包括提供具有接触焊盘的衬底和覆盖接触焊盘的下凸块冶金的步骤，以及覆盖凸块下金属的光致抗蚀剂层，并且其中光致抗蚀剂层具有限定在其下的凸起到下凸块冶金 并与接触垫对准。 在第一种润湿溶液镀覆第一种子层之前，先在底部凸起冶金上预处理基材。 此后，将第一种子层的电镀被镀在凸块下的金属上。