公开(公告)号：US20090242942A1

公开(公告)日：2009-10-01

申请号：US12059059

申请日：2008-03-31

Applicant: Huilong Zhu ,  Hong Lin ,  Katherine L. Saenger ,  Kai Xiu ,  Haizhou Yin

Inventor： Huilong Zhu ,  Hong Lin ,  Katherine L. Saenger ,  Kai Xiu ,  Haizhou Yin

IPC: H01L29/04 ,  H01L21/8238

CPC classification number: H01L21/823807 ,  H01L21/28132 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor structure, such as a CMOS semiconductor structure, includes a field effect device that includes a plurality of source and drain regions that are asymmetric. Such a source region and drain region asymmetry is induced by fabricating the semiconductor structure using a semiconductor substrate that includes a horizontal plateau region contiguous with and adjoining a sloped incline region. Within the context of a CMOS semiconductor structure, such a semiconductor substrate allows for fabrication of a pFET and an nFET upon different crystallographic orientation semiconductor regions, while one of the pFET and the nFET (i.e., typically the pFET) has asymmetric source and drain regions.

Abstract translation: 诸如CMOS半导体结构的半导体结构包括具有不对称的多个源区和漏区的场效应器件。 通过使用包括与倾斜斜面区域相邻并相邻的水平平台区域的半导体衬底制造半导体结构来诱导这种源区和漏区不对称。 在CMOS半导体结构的上下文中，这种半导体衬底允许在不同的晶体取向半导体区域上制造pFET和nFET，而pFET和nFET（即，通常为pFET）中的一个具有不对称的源极和漏极区域 。

公开(公告)号：US20080001260A1

公开(公告)日：2008-01-03

申请号：US11427491

申请日：2006-06-29

Applicant: Huilong Zhu ,  Hong Lin

Inventor： Huilong Zhu ,  Hong Lin

IPC: H01L29/06

CPC classification number: H01L29/66636 ,  H01L29/045 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/78618 ,  Y10S257/902

Abstract: The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.

Abstract translation: 本发明涉及具有位于源极和漏极（S / D）区域处的应力诱导结构的改进的金属氧化物半导体场效应晶体管（MOSFET）器件。 具体地，每个MOSFET包括位于半导体衬底中的源区和漏区。 这种源极和漏极区域包括具有相对于半导体衬底的上表面倾斜的一个或多个侧壁表面的凹部。 应力诱导电介质层位于源极和漏极区域的凹部的倾斜侧壁表面上。 这样的MOSFET可以通过半导体衬底的晶体刻蚀容易地形成，以形成具有倾斜侧壁表面的凹部，然后在其上沉积应力诱导介电层。

公开(公告)号：US20080057710A1

公开(公告)日：2008-03-06

申请号：US11928356

申请日：2007-10-30

Applicant: Huilong Zhu ,  Hong Lin

Inventor： Huilong Zhu ,  Hong Lin

IPC: H01L21/44

CPC classification number: H01L29/66636 ,  H01L29/045 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/78618 ,  Y10S257/902

Abstract: The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.

公开(公告)号：US20070221959A1

公开(公告)日：2007-09-27

申请号：US11308410

申请日：2006-03-22

Applicant: Huilong Zhu ,  Hong Lin

Inventor： Huilong Zhu ,  Hong Lin

IPC: H01L29/76

CPC classification number: H01L29/66621 ,  H01L29/66553

Abstract: A raised source/drain field effect transistor has a surface of a raised source/drain that tapers downward in a direction of a gate electrode that is also included within the field effect transistor. The downward tapered surface is preferably an end surface. Due to the downward taper, the field effect transistor has a reduced gate to raised source/drain region capacitance. The downward taper also facilitates forming a halo region within the field effect transistor. Due to the raised source/drain, a silicide layer may be included within the raised source/drain region absent silicide penetration through a thin junction within an intrinsic source/drain region also included within the raised source/drain region.

Abstract translation: 升高的源极/漏极场效应晶体管具有在也包括在场效应晶体管内的栅电极的方向上向下逐渐变细的升高的源极/漏极的表面。 向下的锥形表面优选为端面。 由于向下的锥度，场效应晶体管具有减小的栅极以提高源/漏区电容。 向下的锥形还有助于在场效应晶体管内形成晕圈。 由于升高的源极/漏极，在升高的源极/漏极区域内可以包括硅化物层，而硅化物穿透也包括在升高的源极/漏极区域内的本征源极/漏极区域内的薄结。

公开(公告)号：US07977712B2

公开(公告)日：2011-07-12

申请号：US12059059

申请日：2008-03-31

Applicant: Huilong Zhu ,  Hong Lin ,  Katherine L. Saenger ,  Kai Xiu ,  Haizhou Yin

Inventor： Huilong Zhu ,  Hong Lin ,  Katherine L. Saenger ,  Kai Xiu ,  Haizhou Yin

IPC: H01L29/04

CPC classification number: H01L21/823807 ,  H01L21/28132 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/045 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/7835

Abstract: A semiconductor structure, such as a CMOS semiconductor structure, includes a field effect device that includes a plurality of source and drain regions that are asymmetric. Such a source region and drain region asymmetry is induced by fabricating the semiconductor structure using a semiconductor substrate that includes a horizontal plateau region contiguous with and adjoining a sloped incline region. Within the context of a CMOS semiconductor structure, such a semiconductor substrate allows for fabrication of a pFET and an nFET upon different crystallographic orientation semiconductor regions, while one of the pFET and the nFET (i.e., typically the pFET) has asymmetric source and drain regions.

Abstract translation: 诸如CMOS半导体结构的半导体结构包括具有不对称的多个源区和漏区的场效应器件。 通过使用包括与倾斜斜面区域相邻并相邻的水平平台区域的半导体衬底制造半导体结构来诱导这种源区和漏区不对称。 在CMOS半导体结构的上下文中，这种半导体衬底允许在不同的晶体取向半导体区域上制造pFET和nFET，而pFET和nFET（即，通常为pFET）中的一个具有不对称的源极和漏极区域 。

公开(公告)号：US07816261B2

公开(公告)日：2010-10-19

申请号：US11928356

申请日：2007-10-30

Applicant: Huilong Zhu ,  Hong Lin

Inventor： Huilong Zhu ,  Hong Lin

IPC: H01L21/44

CPC classification number: H01L29/66636 ,  H01L29/045 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/78618 ,  Y10S257/902

Abstract: The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.

Abstract translation: 本发明涉及具有位于源极和漏极（S / D）区域处的应力诱导结构的改进的金属氧化物半导体场效应晶体管（MOSFET）器件。 具体地，每个MOSFET包括位于半导体衬底中的源区和漏区。 这种源极和漏极区域包括具有相对于半导体衬底的上表面倾斜的一个或多个侧壁表面的凹部。 应力诱导电介质层位于源极和漏极区域的凹部的倾斜侧壁表面上。 这样的MOSFET可以通过半导体衬底的晶体刻蚀容易地形成，以形成具有倾斜侧壁表面的凹部，然后在其上沉积应力诱导介电层。

公开(公告)号：US07560758B2

公开(公告)日：2009-07-14

申请号：US11427491

申请日：2006-06-29

Applicant: Huilong Zhu ,  Hong Lin

Inventor： Huilong Zhu ,  Hong Lin

IPC: H01L29/80

CPC classification number: H01L29/66636 ,  H01L29/045 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/7843 ,  H01L29/78618 ,  Y10S257/902

Abstract: The present invention relates to improved metal-oxide-semiconductor field effect transistor (MOSFET) devices with stress-inducing structures located at the source and drain (S/D) regions. Specifically, each MOSFET comprises source and drain regions located in a semiconductor substrate. Such source and drain regions comprise recesses with one or more sidewall surfaces that are slanted in relation to an upper surface of the semiconductor substrate. A stress-inducing dielectric layer is located over the slanted sidewall surfaces of the recesses at the source and drain regions. Such MOSFETs can be readily formed by crystallographic etching of the semiconductor substrate to form the recesses with the slanted sidewall surfaces, followed by deposition of a stress-inducing dielectric layer thereover.

Abstract translation: 本发明涉及具有位于源极和漏极（S / D）区域处的应力诱导结构的改进的金属氧化物半导体场效应晶体管（MOSFET）器件。 具体地，每个MOSFET包括位于半导体衬底中的源区和漏区。 这种源极和漏极区域包括具有相对于半导体衬底的上表面倾斜的一个或多个侧壁表面的凹部。 应力诱导电介质层位于源极和漏极区域的凹部的倾斜侧壁表面上。 这样的MOSFET可以通过半导体衬底的晶体刻蚀容易地形成，以形成具有倾斜侧壁表面的凹部，然后在其上沉积应力诱导介电层。

公开(公告)号：US20130110925A1

公开(公告)日：2013-05-02

申请号：US13287914

申请日：2011-11-02

Applicant: Cynthia Wessling ,  Thomas Underhill ,  Alex Simmons ,  Hong Lin ,  Stuti Jain ,  Kitty Chou ,  Charles Duze ,  Sirirat Reinikka ,  Shruti Kasetty ,  Syed Bilal ,  Jeffrey Bell ,  David Rasmussen

Inventor： Cynthia Wessling ,  Thomas Underhill ,  Alex Simmons ,  Hong Lin ,  Stuti Jain ,  Kitty Chou ,  Charles Duze ,  Sirirat Reinikka ,  Shruti Kasetty ,  Syed Bilal ,  Jeffrey Bell ,  David Rasmussen

IPC: G06F15/16

CPC classification number: G06Q10/109 ,  G06F3/041 ,  H04L12/1827 ,  H04L51/04

Abstract: Notes may be shared in an online meeting with online meeting attendees through a software application associated with organizing an online meeting, for example, online meeting software, calendaring software, note-taking software, or the like. Notes may be created and/or shared before, during, and/or after the online meeting by meeting attendees. Meeting attendees may be notified when notes are shared for the online meeting. Notes may be shared with items of the software application associated with organizing the online meeting. For example, notes may be shared in online meeting software with the online meeting. Notes may be shared among items of different software applications, for example, notes shared in the online meeting software may be automatically shared with a calendar item in a calendaring software application.

Abstract translation: 可以通过与组织在线会议相关联的软件应用，例如在线会议软件，日历软件，笔记软件等在线会议参与者在线会议中分享注释。 备注可能会在会议与会者在线会议之前，期间和/或之后创建和/或分享。 当在线会议共享笔记时，可能会通知会议与会者。 备注可以与组织在线会议相关联的软件应用程序的项目共享。 例如，笔记可以在线会议软件与在线会议共享。 备注可以在不同软件应用程序的项目之间共享，例如，在线会议软件中共享的注释可以与日历软件应用程序中的日历项目自动共享。

公开(公告)号：US20090255868A1

公开(公告)日：2009-10-15

申请号：US12420486

申请日：2009-04-08

Applicant: Vaikko P. Allen, II ,  Jeremiah M. Lehman ,  James H. Lenhart, JR. ,  Hong Lin ,  Daniel P. Cobb ,  Gregory W. Byrne

Inventor： Vaikko P. Allen, II ,  Jeremiah M. Lehman ,  James H. Lenhart, JR. ,  Hong Lin ,  Daniel P. Cobb ,  Gregory W. Byrne

IPC: E03F1/00 ,  C02F1/00 ,  C02F3/00

CPC classification number: C02F3/32 ,  C02F1/004 ,  C02F3/327 ,  C02F2103/001 ,  E03F1/002 ,  Y02A10/37 ,  Y02W10/18

Abstract: A stormwater filtration system suitable for treatment of stormwater runoff in a developed environment uses a primary treatment bay that includes a filtration bed with live plant matter. A second treatment bay treats water that exceeds the maximum throughput of the primary bay. A reservoir stores treated runoff to water the plants during dry weather. Removable trays on the surface of the primary filtration bed provide plants suitable for ground cover. Additional bays expand the filtration bed throughput and accommodate extended root systems. A flow control may be provided for the primary treatment bay.

Abstract translation: 适用于在发达环境中治理雨水径流的雨水过滤系统使用包括带有活植物物质的过滤床的初级处理室。 第二处理舱处理超过主舱的最大吞吐量的水。 在干燥天气期间，水库存储处理的径流给植物。 主滤床表面的可移动托盘提供适合地面覆盖的植物。 额外的海湾扩大了过滤床的吞吐量并适应了扩展的根系统。 可以为主处理室提供流量控制。

公开(公告)号：US20080227433A1

公开(公告)日：2008-09-18

申请号：US12128055

申请日：2008-05-28

Applicant: Hong Lin ,  Song Song ,  Pei Sun ,  Jun Shen

Inventor： Hong Lin ,  Song Song ,  Pei Sun ,  Jun Shen

IPC: H04Q7/22

CPC classification number: H04W4/12 ,  H04L51/10 ,  H04L51/38 ,  H04W88/02 ,  H04W88/184

Abstract: An interactive method, a user terminal and a communication system am provided for multimedia message services. The method comprises the steps of receiving a multimedia message from a server; generating a page displaying or playing the multimedia message at a user terminal, wherein one or more controllers are embedded into the displayed or played multimedia message and associations between said controllers are defined; and triggering at least one action event and performing a corresponding action in response to the operations of one or more controllers. A response message fed back to the server is automatically generated at the user terminal, and an optimized multimedia message interface is provided for the user, a local interaction and a interaction between the terminal and the back end service can be flexibly realized.

Abstract translation: 为多媒体消息服务提供交互方式，用户终端和通信系统。 该方法包括从服务器接收多媒体消息的步骤; 生成在用户终端显示或播放多媒体消息的页面，其中将一个或多个控制器嵌入到所显示或播放的多媒体消息中，并且定义所述控制器之间的关联; 并且响应于一个或多个控制器的操作，触发至少一个动作事件并执行相应的动作。 在用户终端自动产生反馈到服务器的响应消息，并为用户提供优化的多媒体消息接口，可以灵活地实现终端和后端服务之间的本地交互和交互。