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1.发明申请Polycarbonate Resin Composition Having Good Mold Release Properties and Good Appearance and Molded Article Using the Same 审中-公开具有良好脱模性和良好外观的聚碳酸酯树脂组合物及使用其的成型品公开(公告)号：US20120165460A1
公开(公告)日：2012-06-28
申请号：US13239840
申请日：2011-09-22
申请人： Hwan Seok PARK , Jin Seong LEE , Jong Tae YOON , Yun Ku NAM , Min Jung KANG , Seung Shik SHIN , Woo Jung KIM , Kyuong Sik CHIN
发明人： Hwan Seok PARK , Jin Seong LEE , Jong Tae YOON , Yun Ku NAM , Min Jung KANG , Seung Shik SHIN , Woo Jung KIM , Kyuong Sik CHIN
CPC分类号： C08L69/00 , C08G77/445 , C08G77/448 , C08L83/00 , C08L83/04 , C08L83/10
摘要： The present invention discloses a polycarbonate resin composition which includes a polycarbonate resin (A), a polycarbonate-polysiloxane copolymer (B), and a siloxane copolyester (C), wherein the siloxane copolyester (C) is present in an amount of about 0.1 to about 6 wt % based on 100 wt % of a base resin including the polycarbonate resin (A), polycarbonate-polysiloxane copolymer (B), and siloxane copolyester (C). The composition can have excellent mold release properties and appearance.
摘要翻译： 本发明公开了一种聚碳酸酯树脂组合物，其包含聚碳酸酯树脂（A），聚碳酸酯 - 聚硅氧烷共聚物（B）和硅氧烷共聚酯（C），其中硅氧烷共聚酯（C）的存在量为约0.1〜 基于100重量％的包含聚碳酸酯树脂（A），聚碳酸酯 - 聚硅氧烷共聚物（B）和硅氧烷共聚酯（C）的基础树脂为约6重量％。 该组合物可以具有优异的脱模性和外观。
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公开(公告)号：US20170040335A1
公开(公告)日：2017-02-09
申请号：US15168349
申请日：2016-05-31
申请人： Joon Sung LIM , Kyu Baik CHANG , Sung Hoi HUR , Woo Jung KIM
发明人： Joon Sung LIM , Kyu Baik CHANG , Sung Hoi HUR , Woo Jung KIM
IPC分类号： H01L27/115
CPC分类号： H01L27/11575 , H01L21/823481 , H01L21/823878 , H01L27/11548 , H01L27/1157 , H01L27/11573 , H01L27/11582 , H01L28/00
摘要： A semiconductor device includes a substrate, a plurality of memory cell arrays, and an air gap structure. The substrate includes a cell region, a peripheral circuit region, and a boundary region. The boundary region is between the cell region and the peripheral circuit region. The plurality of memory cell arrays are on the cell region. The air gap structure includes a trench formed in the boundary region of the substrate. The air gap structure defines an air gap.
摘要翻译： 半导体器件包括衬底，多个存储单元阵列和气隙结构。 基板包括单元区域，外围电路区域和边界区域。 边界区域在单元区域和外围电路区域之间。 多个存储单元阵列位于单元区域上。 气隙结构包括形成在基板的边界区域中的沟槽。 气隙结构限定气隙。
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