公开(公告)号：US20160181509A1

公开(公告)日：2016-06-23

申请号：US14965386

申请日：2015-12-10

申请人： HYE MIN SHIN ,  Jun Ho Park ,  Dae Eun Jeong

发明人： HYE MIN SHIN ,  Jun Ho Park ,  Dae Eun Jeong

IPC分类号： H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/228 ,  H01L43/12

摘要： Methods of manufacturing a magnetic memory device including forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a first insulating layer exposing an upper surface of the MTJ pattern, forming a polymer pattern on the exposed upper surface of the MTJ pattern, forming a second insulating layer exposing an upper surface of the polymer pattern, removing the polymer pattern to form a cavity in the second insulating layer, the cavity exposing the upper surface of the MTJ pattern, and forming a metal line by filling the cavity with a conductive metal.

摘要翻译： 制造包括在基板上形成下磁性层，隧道势垒层和上磁性层的磁存储器件的方法，通过图案化下磁层，隧道势垒层和形成磁隧道结（MTJ） 所述上磁性层形成暴露所述MTJ图案的上表面的第一绝缘层，在所述MTJ图案的暴露的上表面上形成聚合物图案，形成暴露所述聚合物图案的上表面的第二绝缘层，除去所述聚合物 在第二绝缘层中形成空腔，空腔暴露MTJ图案的上表面，并且通过用导电金属填充空腔来形成金属线。

公开(公告)号：US09647033B2

公开(公告)日：2017-05-09

申请号：US14965386

申请日：2015-12-10

申请人： Hye Min Shin ,  Jun Ho Park ,  Dae Eun Jeong

发明人： Hye Min Shin ,  Jun Ho Park ,  Dae Eun Jeong

IPC分类号： H01L27/22 ,  H01L43/12

CPC分类号： H01L27/228 ,  H01L43/12

摘要： Methods of manufacturing a magnetic memory device including forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a first insulating layer exposing an upper surface of the MTJ pattern, forming a polymer pattern on the exposed upper surface of the MTJ pattern, forming a second insulating layer exposing an upper surface of the polymer pattern, removing the polymer pattern to form a cavity in the second insulating layer, the cavity exposing the upper surface of the MTJ pattern, and forming a metal line by filling the cavity with a conductive metal.

公开(公告)号：US09627609B2

公开(公告)日：2017-04-18

申请号：US14821763

申请日：2015-08-09

申请人： Dae Eun Jeong

发明人： Dae Eun Jeong

IPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： A method of manufacturing a magnetic memory device may include forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction pattern by etching a stacked structure including the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, forming a boron-absorption layer covering the magnetic tunnel junction pattern, and performing a heat treatment process so that boron included in the upper and lower magnetic layers may be absorbed by the boron-absorption layer. The heat treatment process may be undertaken in a gaseous atmosphere including at least one of hydrogen, oxygen, and nitrogen.