公开(公告)号：US20130175539A1

公开(公告)日：2013-07-11

申请号：US13613677

申请日：2012-09-13

申请人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

发明人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/66462 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7785 ,  H01L29/7787

摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.

摘要翻译： 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。 沟道层可以包括有效沟道区和高电阻率区。 有效沟道区可以在高电阻率区域和沟道供应层之间。 高电阻率区域可以是离子注入杂质的区域。 根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

公开(公告)号：US20130175538A1

公开(公告)日：2013-07-11

申请号：US13551217

申请日：2012-07-17

申请人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

发明人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

IPC分类号： H01L29/20 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41741 ,  H01L29/66734

摘要： According to example embodiments, a substrate structure may include a GaN-based third material layer, a GaN-based second material layer, a GaN-based first material layer, and a buffer layer on a non-GaN-based substrate. The GaN-based first material layer may be doped with a first conductive type impurity. The GaN-based second material layer may be doped with a second conductive type impurity at a density that is less than a density of the first conductive type impurity in the first GaN-based material layer. The GaN-based third material layer may be doped with a first conductive type impurity at a density that is less than the density of the first conductive type impurity of the GaN-based first material layer. After a second substrate is attached onto the substrate structure, the non-GaN-based substrate may be removed and a GaN-based vertical type semiconductor device may be fabricated on the second substrate.

摘要翻译： 根据示例实施例，衬底结构可以包括GaN基第三材料层，GaN基第二材料层，GaN基第一材料层和非GaN基衬底上的缓冲层。 GaN基第一材料层可以掺杂有第一导电类型的杂质。 GaN基第二材料层可以以小于第一GaN基材料层中的第一导电类型杂质的密度的密度掺杂第二导电型杂质。 GaN基第三材料层可以以比GaN基第一材料层的第一导电类型杂质的密度小的密度掺杂第一导电型杂质。 在将第二衬底附着到衬底结构上之后，可以去除非GaN基衬底，并且可以在第二衬底上制造GaN基垂直型半导体器件。