公开(公告)号：US20130175538A1

公开(公告)日：2013-07-11

申请号：US13551217

申请日：2012-07-17

申请人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

发明人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

IPC分类号： H01L29/20 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41741 ,  H01L29/66734

摘要： According to example embodiments, a substrate structure may include a GaN-based third material layer, a GaN-based second material layer, a GaN-based first material layer, and a buffer layer on a non-GaN-based substrate. The GaN-based first material layer may be doped with a first conductive type impurity. The GaN-based second material layer may be doped with a second conductive type impurity at a density that is less than a density of the first conductive type impurity in the first GaN-based material layer. The GaN-based third material layer may be doped with a first conductive type impurity at a density that is less than the density of the first conductive type impurity of the GaN-based first material layer. After a second substrate is attached onto the substrate structure, the non-GaN-based substrate may be removed and a GaN-based vertical type semiconductor device may be fabricated on the second substrate.

摘要翻译： 根据示例实施例，衬底结构可以包括GaN基第三材料层，GaN基第二材料层，GaN基第一材料层和非GaN基衬底上的缓冲层。 GaN基第一材料层可以掺杂有第一导电类型的杂质。 GaN基第二材料层可以以小于第一GaN基材料层中的第一导电类型杂质的密度的密度掺杂第二导电型杂质。 GaN基第三材料层可以以比GaN基第一材料层的第一导电类型杂质的密度小的密度掺杂第一导电型杂质。 在将第二衬底附着到衬底结构上之后，可以去除非GaN基衬底，并且可以在第二衬底上制造GaN基垂直型半导体器件。

公开(公告)号：US20130175539A1

公开(公告)日：2013-07-11

申请号：US13613677

申请日：2012-09-13

申请人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

发明人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  Ki-ha HONG ,  In-jun HWANG

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/66462 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7785 ,  H01L29/7787

摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.

摘要翻译： 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。 沟道层可以包括有效沟道区和高电阻率区。 有效沟道区可以在高电阻率区域和沟道供应层之间。 高电阻率区域可以是离子注入杂质的区域。 根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

公开(公告)号：US20080068880A1

公开(公告)日：2008-03-20

申请号：US11850988

申请日：2007-09-06

申请人： Chee-kheng LIM ,  Eun-sik KIM ,  In-jun HWANG

发明人： Chee-kheng LIM ,  Eun-sik KIM ,  In-jun HWANG

IPC分类号： G11C11/15

CPC分类号： G11C11/15 ,  G11C19/0808

摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

摘要翻译： 提供了采用磁畴壁运动的存储器件。 存储器件包括写入轨道和列结构。 写入轨迹形成具有预定磁化方向的磁畴。 列结构形成在写入轨道上，并且包括至少一个互连层和至少一个存储轨道。

公开(公告)号：US20130069074A1

公开(公告)日：2013-03-21

申请号：US13610025

申请日：2012-09-11

申请人： Jae-won LEE ,  Su-hee CHAE ,  Jun-youn KIM ,  In-jun HWANG ,  Hyo-ji CHOI

发明人： Jae-won LEE ,  Su-hee CHAE ,  Jun-youn KIM ,  In-jun HWANG ,  Hyo-ji CHOI

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/205

CPC分类号： H01L29/0649 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： According to an example embodiment, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit. Source, drain, and gate electrodes are on the nitride-containing stack. The nitride-containing stack includes a first region that is configured to generate a larger electric field than that of a second region of the nitride-containing stack. The electric field dispersion unit may be between the substrate and the first region of the nitride-containing stack.

摘要翻译： 根据示例性实施例，功率器件包括衬底，衬底上的含氮化物的叠层和电场分散单元。 源极，漏极和栅电极位于含氮化物的堆叠上。 含氮化物的堆叠包括被配置为产生比含氮化物堆叠的第二区域更大的电场的第一区域。 电场分散单元可以在衬底和含氮化物堆叠的第一区域之间。

公开(公告)号：US20090197350A1

公开(公告)日：2009-08-06

申请号：US12372492

申请日：2009-02-17

申请人： In-jun HWANG ,  Tae-wan KIM ,  Won-cheol JEONG

发明人： In-jun HWANG ,  Tae-wan KIM ,  Won-cheol JEONG

IPC分类号： H01L21/00 ,  H01L21/335

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

摘要翻译： 磁性随机存取存储器（MRAM）装置的示例性实施例包括具有自由层的磁性隧道结，具有覆盖自由层的表面的第一部分的第一电极（第一磁场产生装置）和电力 源极经由覆盖小于第一电极的第一部分的一半的连接而连接到第一电极。 MRAM器件的另一个示例性实施例包括磁性隧道结，直接连接到磁性隧道结相对侧上的磁性隧道结的第一和第二电极（第一和第二磁场产生装置）和具有一个极点的电源 经由第一连接器连接到第一电极，并且具有通过第二连接连接到第二电极的第二极，其中第一和第二连接部从第一和第二电极与磁性隧道结之间的连接侧向偏移。 还公开了操作和制造这些磁性随机存取存储器的方法。

公开(公告)号：US20090154230A1

公开(公告)日：2009-06-18

申请号：US12372587

申请日：2009-02-17

申请人： In-jun HWANG ,  Tae-wan Kim ,  Won-cheol Jeong

发明人： In-jun HWANG ,  Tae-wan Kim ,  Won-cheol Jeong

IPC分类号： G11C11/14 ,  G11C5/14

CPC分类号： G11C11/15

摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.