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    SUBSTRATE STRUCTURE, SEMICONDUCTOR DEVICE FABRICATED FROM THE SAME, AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE
    2.
    发明申请
    SUBSTRATE STRUCTURE, SEMICONDUCTOR DEVICE FABRICATED FROM THE SAME, AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE 有权
    衬底结构，由其制成的半导体器件以及制造半导体器件的方法

    公开(公告)号：US20130175538A1

    公开(公告)日：2013-07-11

    申请号：US13551217

    申请日：2012-07-17

    申请人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

    发明人： Hyuk-soon CHOI ,  Jong-seob KIM ,  Jai-kwang SHIN ,  Chang-yong UM ,  Jae-joon OH ,  Jong-bong HA ,  In-jun HWANG ,  Ki-ha HONG

    IPC分类号： H01L29/20 ,  H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41741 ,  H01L29/66734

    摘要： According to example embodiments, a substrate structure may include a GaN-based third material layer, a GaN-based second material layer, a GaN-based first material layer, and a buffer layer on a non-GaN-based substrate. The GaN-based first material layer may be doped with a first conductive type impurity. The GaN-based second material layer may be doped with a second conductive type impurity at a density that is less than a density of the first conductive type impurity in the first GaN-based material layer. The GaN-based third material layer may be doped with a first conductive type impurity at a density that is less than the density of the first conductive type impurity of the GaN-based first material layer. After a second substrate is attached onto the substrate structure, the non-GaN-based substrate may be removed and a GaN-based vertical type semiconductor device may be fabricated on the second substrate.

    摘要翻译： 根据示例实施例，衬底结构可以包括GaN基第三材料层，GaN基第二材料层，GaN基第一材料层和非GaN基衬底上的缓冲层。 GaN基第一材料层可以掺杂有第一导电类型的杂质。 GaN基第二材料层可以以小于第一GaN基材料层中的第一导电类型杂质的密度的密度掺杂第二导电型杂质。 GaN基第三材料层可以以比GaN基第一材料层的第一导电类型杂质的密度小的密度掺杂第一导电型杂质。 在将第二衬底附着到衬底结构上之后，可以去除非GaN基衬底，并且可以在第二衬底上制造GaN基垂直型半导体器件。

    SEMICONDUCTOR DEVICE INCLUDING GROUP III-V BARRIER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING GROUP III-V BARRIER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 有权
    包括III-V族阻挡层的半导体器件及制造半导体器件的方法

    公开(公告)号：US20130119347A1

    公开(公告)日：2013-05-16

    申请号：US13611127

    申请日：2012-09-12

    申请人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

    发明人： Young-jin CHO ,  Kyoung-yeon KIM ,  Sang-moon LEE ,  Ki-ha HONG ,  Eui-chul HWANG

    IPC分类号： H01L21/335 ,  H01L29/775

    CPC分类号： H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

    摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

    摘要翻译： 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。