公开(公告)号：US20110073586A1

公开(公告)日：2011-03-31

申请号：US12989929

申请日：2009-04-28

申请人： Hyun Chul Lim ,  Jae Suk Yang ,  Soung Ho Jang ,  Joong Ki Min ,  Sang Dong Jeong ,  Jae Yeong Lee ,  Yong Wook Shin

发明人： Hyun Chul Lim ,  Jae Suk Yang ,  Soung Ho Jang ,  Joong Ki Min ,  Sang Dong Jeong ,  Jae Yeong Lee ,  Yong Wook Shin

IPC分类号： H05B3/02 ,  H01C17/02

CPC分类号： F25D21/08 ,  H05B3/20 ,  H05B2214/02 ,  Y10T29/49083

摘要： Provided is a defrost heater using a surface heat emission element of a metal thin film having a fast temperature response performance and a low thermal density, to thereby use an environment-friendly refrigerant, and that performs quick temperature rising and cooling during performing a defrost cycle, to thereby quickly restart a refrigeration cycle and thus greatly reduce time required for the defrost cycle, and a fabricating method thereof, and a defrost apparatus using the same. The defrost heater includes: a strip type surface heat emission element made of a strip type metal thin plate; an insulation layer that coats the outer circumference of the strip type surface heat emission element; and a heat transfer board on one side surface of which the surface heat emission element on the outer circumferential surface of which the insulation layer has been coated is installed, and that contacts evaporator fins so that heat generated from the surface heat emission element is transferred to an evaporator.

摘要翻译： 提供一种除霜加热器，其使用具有快速的温度响应性能和低热密度的金属薄膜的表面发热元件，从而使用环境友好的制冷剂，并且在执行除霜循环期间执行快速升温和冷却 ，从而快速重新启动制冷循环，从而大大减少除霜循环所需的时间及其制造方法，以及使用该制冷循环的除霜装置。 除霜加热器包括：由带状金属薄板制成的带状表面发热元件; 覆盖带状表面发热体的外周的绝缘层; 并且在其外表面上已经涂覆有绝缘层的表面发热元件的一个侧表面上安装有传热板，并且与蒸发器翅片接触，从而将从表面发热元件产生的热量转移到 蒸发器。

公开(公告)号：US08405009B2

公开(公告)日：2013-03-26

申请号：US12989929

申请日：2009-04-28

申请人： Hyun Chul Lim ,  Jae Suk Yang ,  Soung Ho Jang ,  Joong Ki Min ,  Sang Dong Jeong ,  Jae Yeong Lee ,  Yong Wook Shin

发明人： Hyun Chul Lim ,  Jae Suk Yang ,  Soung Ho Jang ,  Joong Ki Min ,  Sang Dong Jeong ,  Jae Yeong Lee ,  Yong Wook Shin

IPC分类号： H05B3/02 ,  F25B13/00

CPC分类号： F25D21/08 ,  H05B3/20 ,  H05B2214/02 ,  Y10T29/49083

摘要： Provided is a defrost heater using a surface heat emission element of a metal thin film having a fast temperature response performance and a low thermal density, to thereby use an environment-friendly refrigerant, and that performs quick temperature rising and cooling during performing a defrost cycle, to thereby quickly restart a refrigeration cycle and thus greatly reduce time required for the defrost cycle, and a fabricating method thereof, and a defrost apparatus using the same. The defrost heater includes: a strip type surface heat emission element made of a strip type metal thin plate; an insulation layer that coats the outer circumference of the strip type surface heat emission element; and a heat transfer board on one side surface of which the surface heat emission element on the outer circumferential surface of which the insulation layer has been coated is installed, and that contacts evaporator fins so that heat generated from the surface heat emission element is transferred to an evaporator.

摘要翻译： 提供一种除霜加热器，其使用具有快速的温度响应性能和低热密度的金属薄膜的表面发热元件，从而使用环境友好的制冷剂，并且在执行除霜循环期间执行快速升温和冷却 ，从而快速重新启动制冷循环，从而大大减少除霜循环所需的时间及其制造方法，以及使用该制冷循环的除霜装置。 除霜加热器包括：由带状金属薄板制成的带状表面发热元件; 覆盖带状表面发热体的外周的绝缘层; 并且在其外表面上已经涂覆有绝缘层的表面发热元件的一个侧表面上安装有传热板，并且与蒸发器翅片接触，从而将从表面发热元件产生的热量转移到 蒸发器。

公开(公告)号：US20080157265A1

公开(公告)日：2008-07-03

申请号：US11951627

申请日：2007-12-06

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L23/58 ,  H01L21/76

CPC分类号： H01L21/76235

摘要： A method for fabricating a semiconductor device is provided. The method includes forming a pad oxide layer on a semiconductor substrate, forming a pad nitride layer on the pad oxide layer, forming a capping layer on the pad nitride layer, patterning the capping layer, the pad nitride layer, and the pad oxide layer by a photolithography method to expose portions of the semiconductor substrate, forming a field oxidation layer having bird's beaks, the bird's beaks being formed under the pad nitride layer, forming trenches in the semiconductor substrate by anisotropically etching the field oxide layer and the semiconductor substrate using the pad nitride layer as a mask, removing the capping layer, the pad nitride layer, the pad oxide layer, and the bird's beaks, and forming an isolation region in the trenches.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在半导体衬底上形成衬垫氧化物层，在焊盘氧化层上形成衬垫氮化物层，在焊盘氮化物层上形成覆盖层，通过在氮化层上形成覆盖层，衬垫氮化物层和衬垫氧化物层的图案化 用于曝光半导体衬底的部分的光刻方法，形成具有鸟喙的场氧化层，形成在衬垫氮化物层下的鸟喙，通过各向异性蚀刻场氧化物层和半导体衬底，在半导体衬底中形成沟槽， 衬垫氮化物层作为掩模，去除覆盖层，衬垫氮化物层，衬垫氧化物层和鸟的喙，并在沟槽中形成隔离区。

公开(公告)号：US07608518B2

公开(公告)日：2009-10-27

申请号：US11951627

申请日：2007-12-06

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/76

CPC分类号： H01L21/76235

摘要： A method for fabricating a semiconductor device is provided. The method includes forming a pad oxide layer on a semiconductor substrate, forming a pad nitride layer on the pad oxide layer, forming a capping layer on the pad nitride layer, patterning the capping layer, the pad nitride layer, and the pad oxide layer by a photolithography method to expose portions of the semiconductor substrate, forming a field oxidation layer having bird's beaks, the bird's beaks being formed under the pad nitride layer, forming trenches in the semiconductor substrate by anisotropically etching the field oxide layer and the semiconductor substrate using the pad nitride layer as a mask, removing the capping layer, the pad nitride layer, the pad oxide layer, and the bird's beaks, and forming an isolation region in the trenches.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在半导体衬底上形成衬垫氧化物层，在焊盘氧化层上形成衬垫氮化物层，在焊盘氮化物层上形成覆盖层，通过在氮化层上形成覆盖层，衬垫氮化物层和衬垫氧化物层的图案化 用于曝光半导体衬底的部分的光刻方法，形成具有鸟喙的场氧化层，形成在衬垫氮化物层下的鸟喙，通过各向异性蚀刻场氧化物层和半导体衬底，在半导体衬底中形成沟槽， 衬垫氮化物层作为掩模，去除覆盖层，衬垫氮化物层，衬垫氧化物层和鸟的喙，并在沟槽中形成隔离区。

公开(公告)号：US07618900B2

公开(公告)日：2009-11-17

申请号：US11951846

申请日：2007-12-06

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/31

CPC分类号： H01L21/76837 ,  H01L23/291 ,  H01L23/3192 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A semiconductor device may be fabricated according to a method that reduces stain difference of a passivation layer in the semiconductor device. The method may include forming top wiring patterns in a substrate, depositing a primary undoped silicate glass (USG) layer on the top wiring patterns to fill a gap between the top wiring patterns, and coating a SOG layer on the substrate on which the primary USG layer has been deposited. Next, the SOG layer on the surface of the substrate may be removed until the primary USG layer is exposed, and a secondary USG layer may be deposited on the substrate on which the primary USG layer has been exposed.

摘要翻译： 可以根据减少半导体器件中的钝化层的污染差的方法来制造半导体器件。 该方法可以包括在衬底中形成顶部布线图案，在顶部布线图案上沉积初级未掺杂的硅酸盐玻璃（USG）层以填充顶部布线图案之间的间隙，并且在其上涂覆主要USG的基底上的SOG层 层已经存放。 接下来，可以去除衬底表面上的SOG层，直到暴露初级USG层，并且次级USG层可以沉积在已经暴露了主要USG层的衬底上。

公开(公告)号：US20090142861A1

公开(公告)日：2009-06-04

申请号：US12273806

申请日：2008-11-19

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/66

CPC分类号： G11C29/006 ,  G11C16/04 ,  G11C29/44 ,  G11C29/88 ,  G11C29/883 ,  G11C29/886 ,  G11C2029/1208

摘要： Disclosed are methods of manufacturing a flash memory device. The method can include performing a first test on memory banks of chips on a wafer to record an availability of the banks; performing an inking process on each of the chips according to a number of available banks in the chip; performing a sawing process to divide the chips mounted on the wafer; packaging the divided chips according to the number of available banks in the chip; and performing a verification test on the packaged chips.

摘要翻译： 公开了制造闪存装置的方法。 该方法可以包括对晶片上的芯片的存储体执行第一测试以记录银行的可用性; 根据芯片中的可用库的数量对每个芯片执行上墨处理; 执行锯切工艺以分割安装在晶片上的芯片; 根据芯片中可用库的数量封装划分的芯片; 并对封装的芯片执行验证测试。

公开(公告)号：US07413956B2

公开(公告)日：2008-08-19

申请号：US11181577

申请日：2005-07-13

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/336

CPC分类号： H01L29/665 ,  H01L21/823814 ,  H01L21/823878 ,  H01L29/66583 ,  H01L29/78

摘要： Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a semiconductor substrate, in which active and inactive regions are separated by a field oxidation film; source/drain junctions contacting the field oxidation film and formed in the active regions of the semiconductor substrates; a buffer oxidation film formed at designated portions of the source/drain junctions, and a gate electrode formed on the semiconductor substrate adjacent to the buffer oxidation film; and a silicide film formed at designated portions of the source/drain junctions and the upper surface of the gate electrode.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体器件包括其中有源和非活性区域被场氧化膜分离的半导体衬底; 源极/漏极接点与场氧化膜接触并形成在半导体衬底的有源区中; 形成在源极/漏极结的指定部分处的缓冲氧化膜和形成在与缓冲氧化膜相邻的半导体衬底上的栅电极; 以及在源极/漏极结的指定部分和栅电极的上表面处形成的硅化物膜。

公开(公告)号：US07936050B2

公开(公告)日：2011-05-03

申请号：US12573837

申请日：2009-10-05

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/31

CPC分类号： H01L21/76837 ,  H01L23/291 ,  H01L23/3192 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A semiconductor device may be fabricated according to a method that reduces stain difference of a passivation layer in the semiconductor device. The method may include forming top wiring patterns in a substrate, depositing a primary undoped silicate glass (USG) layer on the top wiring patterns to fill a gap between the top wiring patterns, and coating a SOG layer on the substrate on which the primary USG layer has been deposited. Next, the SOG layer on the surface of the substrate may be removed until the primary USG layer is exposed, and a secondary USG layer may be deposited on the substrate on which the primary USG layer has been exposed.

摘要翻译： 可以根据减少半导体器件中的钝化层的污染差的方法来制造半导体器件。 该方法可以包括在衬底中形成顶部布线图案，在顶部布线图案上沉积初级未掺杂的硅酸盐玻璃（USG）层以填充顶部布线图案之间的间隙，并且在其上涂覆主要USG的基底上的SOG层 层已经存放。 接下来，可以去除衬底表面上的SOG层，直到暴露初级USG层，并且次级USG层可以沉积在已经暴露了主要USG层的衬底上。

公开(公告)号：US07732226B2

公开(公告)日：2010-06-08

申请号：US12273806

申请日：2008-11-19

申请人： Yong Wook Shin

发明人： Yong Wook Shin

IPC分类号： H01L21/00

CPC分类号： G11C29/006 ,  G11C16/04 ,  G11C29/44 ,  G11C29/88 ,  G11C29/883 ,  G11C29/886 ,  G11C2029/1208

摘要： Disclosed are methods of manufacturing a flash memory device. The method can include performing a first test on memory banks of chips on a wafer to record an availability of the banks; performing an inking process on each of the chips according to a number of available banks in the chip; performing a sawing process to divide the chips mounted on the wafer; packaging the divided chips according to the number of available banks in the chip; and performing a verification test on the packaged chips.

摘要翻译： 公开了制造闪存装置的方法。 该方法可以包括对晶片上的芯片的存储体执行第一测试以记录银行的可用性; 根据芯片中的可用库的数量对每个芯片执行上墨处理; 执行锯切工艺以分割安装在晶片上的芯片; 根据芯片中可用库的数量封装划分的芯片; 并对封装的芯片执行验证测试。