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公开(公告)号:US20010004325A1
公开(公告)日:2001-06-21
申请号:US09776928
申请日:2001-02-06
发明人: Woong Lim Choi
IPC分类号: G11C011/34
CPC分类号: H01L29/42324 , G11C11/5621 , G11C11/5628 , G11C11/5635 , G11C16/0425 , G11C2211/5613 , G11C2211/5621 , G11C2211/5624 , H01L29/42328
摘要: Nonvolatile memory device and a method of programming the same, is disclosed, wherein, for single level or multi-level programming of a cell, predetermined voltages are applied to a control gate, source and drain respectively for varying a charge amount in the floating gate. A channel in a transistor is turned off at an initial stage and then turned on thereafter, and at least one of the voltages applied to the control gate and the program/select gate is halted to stop the programming when a conductivity of the channel region reaches a reference value.