公开(公告)号：US10276589B2

公开(公告)日：2019-04-30

申请号：US15499291

申请日：2017-04-27

申请人： Hyung Joon Kim ,  Yong Seok Cho ,  BiO Kim ,  Jung Ho Kim ,  Joong Yun Ra ,  Sung Hae Lee

发明人： Hyung Joon Kim ,  Yong Seok Cho ,  BiO Kim ,  Jung Ho Kim ,  Joong Yun Ra ,  Sung Hae Lee

IPC分类号： H01L27/11582 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H01L29/51 ,  H01L27/11565

摘要： A method of manufacturing a semiconductor device includes forming a mold structure including alternately stacked mold insulating and sacrificial layers on a substrate, forming a vertical structure through the mold structure, forming side openings by removing the sacrificial, forming a preliminary dielectric layer in the side openings, forming a dielectric layer by heat-treating the preliminary dielectric layer, removing a surface layer of the dielectric layer, forming a first conductive layer covering the dielectric layer in the side openings, and forming a second conductive layer covering the first conductive layer and filling the side openings.