摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
In a method of designing a system-on-chip including a tapless standard cell to which body biasing is applied, a slow corner timing parameter is adjusted to increase a slow corner of an operating speed distribution for the system-on-chip by reflecting forward body biasing, and a fast corner timing parameter is adjusted to decrease a fast corner of the operating speed distribution for the system-on-chip by reflecting reverse body biasing. The system-on-chip including the tapless standard cell is implemented based on the adjusted slow corner timing parameter corresponding to the increased slow corner and the adjusted fast corner timing parameter corresponding to the decreased fast corner. The slow corner timing parameter corresponds to a lowest value of an operating speed design window of the system-on-chip, and, the fast corner timing parameter corresponds to a highest value of the operating speed design window of the system-on-chip.
摘要:
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.
摘要:
A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.
摘要:
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.
摘要:
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.
摘要:
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.
摘要:
A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.
摘要:
In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.