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14 条记录 (耗时 0.022 秒)

    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same
    4.
    发明申请
    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same 有权
    具有有源时钟屏蔽结构的电路和包括其的半导体集成电路

    公开(公告)号：US20090237107A1

    公开(公告)日：2009-09-24

    申请号：US12381431

    申请日：2009-03-12

    申请人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    发明人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    IPC分类号： H03K19/003 ,  H04B15/00

    CPC分类号： H04B15/02 ,  H04B2215/064

    摘要： A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.

    摘要翻译： 具有有源时钟屏蔽结构的电路包括接收时钟信号并基于时钟信号执行逻辑运算的逻辑电路，基于时钟信号切换逻辑电路的模式的功率门控电路，基于 电源门控信号，将时钟信号发送到逻辑电路的时钟信号传输线，以及至少一个电源门控信号传输线，其将电源门控信号发送到电源门控电路并用作与时钟的屏蔽线对 信号传输线。

    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same
    5.
    发明授权
    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same 有权
    具有有源时钟屏蔽结构的电路和包括其的半导体集成电路

    公开(公告)号：US08013628B2

    公开(公告)日：2011-09-06

    申请号：US12381431

    申请日：2009-03-12

    申请人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    发明人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    IPC分类号： H03K17/16 ,  H03K19/003

    CPC分类号： H04B15/02 ,  H04B2215/064

    摘要： A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.

    摘要翻译： 具有有源时钟屏蔽结构的电路包括接收时钟信号并基于时钟信号执行逻辑运算的逻辑电路，基于时钟信号切换逻辑电路的模式的功率门控电路，基于 电源门控信号，将时钟信号发送到逻辑电路的时钟信号传输线，以及至少一个电源门控信号传输线，其将电源门控信号发送到电源门控电路并用作与时钟的屏蔽线对 信号传输线。

    Method of estimating a leakage current in a semiconductor device
    7.
    发明授权
    Method of estimating a leakage current in a semiconductor device 有权
    估计半导体器件中漏电流的方法

    公开(公告)号：US08156460B2

    公开(公告)日：2012-04-10

    申请号：US12547729

    申请日：2009-08-26

    申请人： Kyung-Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    发明人： Kyung-Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.

    摘要翻译： 在估计半导体器件中的漏电流的方法中，包括多个单元的芯片通过栅格模型被划分为段。 空间相关性被确定为与每个单元中的泄漏电流有关的工艺参数之间的空间相关性。 通过算术运算实际泄漏特性函数产生单元的虚拟单元泄漏特性函数。 通过对片段中所有单元的虚拟单元泄漏特性函数进行算术运算，产生段的段泄漏特性函数。 然后，通过统计操作芯片中所有段的段泄漏特性函数来产生芯片的全芯片泄漏特性功能。 因此，Wilkinson用于产生全芯片泄漏特性功能的方法的计算负载可以显着降低。

    Power gating circuit and integrated circuit including same
    8.
    发明授权
    Power gating circuit and integrated circuit including same 有权
    电源门控电路和集成电路包括相同

    公开(公告)号：US07948263B2

    公开(公告)日：2011-05-24

    申请号：US12719472

    申请日：2010-03-08

    申请人： Hyung-Ock Kim ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Mun-Jun Seo ,  Youngsoo Shin

    发明人： Hyung-Ock Kim ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Mun-Jun Seo ,  Youngsoo Shin

    IPC分类号： H03K17/16 ,  H03K19/003

    CPC分类号： H03K19/0016 ,  H03K19/0013

    摘要： A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.

    摘要翻译： 电源门控电路包括逻辑电路，开关元件和保持触发器。 逻辑电路耦合在第一电源轨和虚拟电源轨之间。 响应于指示活动模式或待机模式的模式控制信号，开关元件将虚拟电源轨选择性地耦合到第二电源轨。 保持触发器响应于虚拟电源轨的电压选择性地执行触发器操作或数据保持操作。

    Power Gating Circuit and Integrated Circuit Including Same
    9.
    发明申请
    Power Gating Circuit and Integrated Circuit Including Same 有权
    电源门控电路和集成电路包括相同

    公开(公告)号：US20100231255A1

    公开(公告)日：2010-09-16

    申请号：US12719472

    申请日：2010-03-08

    申请人： Hyung-Ock Kim ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Jun Seomun ,  Youngsoo Shin

    发明人： Hyung-Ock Kim ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Jun Seomun ,  Youngsoo Shin

    IPC分类号： H03K19/003

    CPC分类号： H03K19/0016 ,  H03K19/0013

    摘要： A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.

    摘要翻译： 电源门控电路包括逻辑电路，开关元件和保持触发器。 逻辑电路耦合在第一电源轨和虚拟电源轨之间。 响应于指示活动模式或待机模式的模式控制信号，开关元件将虚拟电源轨选择性地耦合到第二电源轨。 保持触发器响应于虚拟电源轨的电压选择性地执行触发器操作或数据保持操作。

    Method of Estimating a Leakage Current in a Semiconductor Device
    10.
    发明申请
    Method of Estimating a Leakage Current in a Semiconductor Device 有权
    估算半导体器件中泄漏电流的方法

    公开(公告)号：US20100058258A1

    公开(公告)日：2010-03-04

    申请号：US12547729

    申请日：2009-08-26

    申请人： Kyung Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    发明人： Kyung Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： In a method of estimating a leakage current in semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of the cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function is generated by arithmetically operating the virtual cell leakage characteristic functions of each cell in the segment. Then, a full chip leakage characteristic function is generated by statistically operating the segment leakage characteristic functions of each segment in the chip. Accordingly, the computational loads of Wilkinson's method for generating the full chip leakage characteristic function may be remarkably reduced.

    摘要翻译： 在估计半导体器件中的漏电流的方法中，包括多个单元的芯片通过栅格模型被划分为段。 空间相关性被确定为与每个单元中的泄漏电流有关的工艺参数之间的空间相关性。 通过算术运算实际漏电特性函数产生单元的虚拟单元泄漏特性函数。 通过对片段中每个单元的虚拟单元泄漏特性函数进行算术运算来产生段泄漏特性函数。 然后，通过统计操作芯片中每个段的段泄漏特性函数来产生全片泄漏特性函数。 因此，威尔金森的用于产生全芯片泄漏特性函数的方法的计算量可以显着降低。