Abstract:
A sensing circuit in which currents in two different paths are differentially varied in response to bipolar input signals. A differential change in the currents sufficient to render the voltage drop across a pair of resistors in either current path approximately equal to the drop across the first one of a like pair of resistors in the other path results in the conduction of the second transistor in an appropriate one of a complementary pair of two-transistor latches to provide an output indication that an input signal at least equal to a predetermined minimum value has been sensed. The voltage drop across the second resistor of each pair establishes an operational threshold which is relatively insensitive to common circuit variations such as in the total current through the two paths, and the latches are regenerative in that conduction by the second transistor in either latch increases the current through the first one of the like pair of resistors to further bias the first transistor thereof into nonconduction.
Abstract:
This specification describes a comparator for comparing memory sense signals with a reference potential and for providing an output indicative of whether the sense signals are larger or smaller than the reference potential. The comparator includes a differential circuit that compares the output of a signal amplifier, for the sense signals, to the voltage drop across a forward biased diode. Simultaneously, the output of a model or reference amplifier, which amplifies the reference potential is compared to the diode voltage drop and the output levels of the model amplifier and the signal amplifier are simultaneously adjusted by a feedback network until the output of the model amplifier is equal to the diode voltage drop. The model and sense amplifiers are practically identical in design and are produced on the same monolithic chip so that the comparison by the differential circuit indicates whether or not the signal on the sense line exceeds the reference potential.