公开(公告)号：US3626257A

公开(公告)日：1971-12-07

申请号：US3626257D

申请日：1969-04-01

Applicant: IBM

Inventor： ESAKI LEO ,  LUDEKE RUDOLF ,  TSU RAPHAEL

IPC: H01L29/15 ,  H01L33/00 ,  H01L47/00 ,  H01L47/02 ,  H01S5/32 ,  H01S5/34 ,  H03B9/12 ,  H01L5/00

CPC classification number: H01L47/00 ,  B82Y20/00 ,  H01L29/155 ,  H01L29/157 ,  H01L33/00 ,  H01S5/32 ,  H01S5/34 ,  H01S5/3425 ,  H03B9/12 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/169

Abstract: The semiconductor device has two highly N-type end portions to which ohmic contacts are made, and a central portion which has a one dimensional spatial periodic variation, in its band-edge energy. This spatial periodic variation, or superlattice, is produced by doping or alloying to form a plurality of successive layers having alternating band-edge energies. The period of the spatial variation is less than the carrier mean free path, and is such as to form in momentum space a plurality of periodic minizones which are much smaller than the Brillouin zones. The device exhibits a bulk negative resistance and is used in oscillator and bistable circuits.