公开(公告)号：US3615951A

公开(公告)日：1971-10-26

申请号：US3615951D

申请日：1969-06-20

Applicant: IBM

Inventor： FRANCO JACK R ,  TOTTA PAUL A ,  WHITE JAMES F

IPC: C23F1/02 ,  H01L21/00 ,  H01L23/522 ,  H05K3/06

CPC classification number: H05K3/067 ,  C23F1/02 ,  H01L21/00 ,  H01L23/522 ,  H01L2924/0002 ,  H05K2203/0315 ,  H05K2203/0369 ,  H05K2203/1142 ,  H05K2203/1157 ,  H01L2924/00

Abstract: A method for subtractive etching copper adapted to form very fine line patterns. In the method a mask is deposited on the copper surface, the copper surface exposed to an environment containing an oxidizing agent which causes the formation of an adherent self thickness limiting coating of a copper compound on the exposed surface, the resultant adherent coating removed in a second environment, and the steps of forming the coating and removing repeated until the desired amount of copper has been removed.