公开(公告)号：US3924134A

公开(公告)日：1975-12-02

申请号：US52831274

申请日：1974-11-29

Applicant: IBM

Inventor： UMAN MYRON F ,  WINNARD JAMES R ,  WINTERS HAROLD F

IPC: H01J3/04 ,  H01J27/00 ,  H01J27/14 ,  H01J37/08 ,  H05H7/08 ,  G01T1/20

CPC classification number: H01J27/14 ,  H01J37/08

Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

Abstract translation: 离子源包括两个放电室，其中一个放电室设置有灯丝和通向另一个室的孔，该另一个室又具有抽出孔。 在灯丝室中的惰性气体气氛中操作低电压电弧放电，而在第二离子化室中操作较高电压的电弧，该第二电离室包含将产生所需掺杂剂离子种类的蒸气。 整个源被浸入平行于连接灯丝，两个室之间的孔和提取孔的线的轴向磁场。

公开(公告)号：US3271589A

公开(公告)日：1966-09-06

申请号：US32882363

申请日：1963-12-09

Applicant: IBM

Inventor： BAXTER DUANE W ,  FELTON BRUCE C ,  ANTON WERNER ,  WINNARD JAMES R

IPC: H03K17/58

CPC classification number: H03K17/58

公开(公告)号：US3693032A

公开(公告)日：1972-09-19

申请号：US3693032D

申请日：1971-04-23

Applicant: IBM

Inventor： WINNARD JAMES R

IPC: H03K19/088 ,  H03K3/26

CPC classification number: H03K19/088

Abstract: This specification discloses a technique of saturation control for a transistor transistor logic (TTL) circuit. The saturation control device includes an additional emitter of the input transistor which is connected to the collector of the output transistor.

Abstract translation: 本说明书公开了一种用于晶体管晶体管逻辑（TTL）电路的饱和度控制技术。 饱和度控制装置包括连接到输出晶体管的集电极的输入晶体管的附加发射极。