公开(公告)号：US11881525B2

公开(公告)日：2024-01-23

申请号：US17884803

申请日：2022-08-10

申请人： IDEAL POWER INC.

发明人： Jiankang Bu ,  Constantin Bulucea ,  Alireza Mojab ,  Jeffrey Knapp ,  Robert Daniel Brdar

IPC分类号： H01L29/747 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/747 ,  H01L29/083 ,  H01L29/1012 ,  H01L29/66386

摘要： Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.