公开(公告)号：US11881525B2

公开(公告)日：2024-01-23

申请号：US17884803

申请日：2022-08-10

申请人： IDEAL POWER INC.

发明人： Jiankang Bu ,  Constantin Bulucea ,  Alireza Mojab ,  Jeffrey Knapp ,  Robert Daniel Brdar

IPC分类号： H01L29/747 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/747 ,  H01L29/083 ,  H01L29/1012 ,  H01L29/66386

摘要： Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, the upper-CE trench defines a proximal opening at the first side and a distal end within the substrate; an upper collector-emitter region disposed at the distal end of the upper-CE trench; a lower base region associated with a second side of substrate; and a lower collector-emitter region associated with the second side.

公开(公告)号：US11777018B2

公开(公告)日：2023-10-03

申请号：US17523513

申请日：2021-11-10

申请人： IDEAL POWER INC.

发明人： Richard A. Blanchard ,  Alireza Mojab

IPC分类号： H01L29/06 ,  H01L29/732

CPC分类号： H01L29/732

摘要： Layout to reduce current crowding at endpoints. At least one example is a semiconductor device comprising: an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having hemispherical ends each having a radius; a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius, and the second end spaced apart from the second hemispherical ends by a second gap greater than the radius.

公开(公告)号：US11411557B2

公开(公告)日：2022-08-09

申请号：US17317466

申请日：2021-05-11

申请人： IDEAL POWER INC.

发明人： Alireza Mojab

IPC分类号： H03K17/66 ,  H01L29/747

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

公开(公告)号：US11804835B2

公开(公告)日：2023-10-31

申请号：US17530981

申请日：2021-11-19

申请人： IDEAL POWER INC.

发明人： Alireza Mojab

IPC分类号： H03K17/66 ,  H01L29/747

CPC分类号： H03K17/668 ,  H01L29/747

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: injecting charge carriers at a first rate into an upper base of the transistor, the injecting at the first rate results in current flow through the transistor from an upper collector-emitter to a lower collector-emitter, and the current flow results in first voltage drop measured across the upper collector-emitter and the lower collector-emitter; and then, within a predetermined period of time before the end of a first conduction period of the transistor, injecting charge carriers into the upper base at a second rate lower than the first rate, the injecting at the second rate results in second voltage drop measured across the upper collector-emitter and the lower collector-emitter, the second voltage drop higher than the first voltage drop; and then making the transistor non-conductive at the end of the conduction period.

公开(公告)号：US11522051B2

公开(公告)日：2022-12-06

申请号：US17537726

申请日：2021-11-30

申请人： IDEAL POWER INC.

发明人： Alireza Mojab ,  Daniel Brdar ,  Ruiyang Yu

IPC分类号： H01L29/10 ,  H03K17/082 ,  H01L29/747 ,  H01L29/732

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

公开(公告)号：US11888030B2

公开(公告)日：2024-01-30

申请号：US18053839

申请日：2022-11-09

申请人： IDEAL POWER INC.

发明人： John Wood ,  Alireza Mojab ,  Daniel Brdar ,  Ruiyang Yu

IPC分类号： H01L29/10 ,  H03K17/082 ,  H01L29/747 ,  H01L29/732

CPC分类号： H01L29/1004 ,  H01L29/732 ,  H01L29/747 ,  H03K17/0826

摘要： Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper-main lead of the transistor, through the transistor, and from a lower-main lead of the transistor to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower-main lead to the lower terminal by opening a lower-main FET and commutating a first shutoff current through a lower-control lead the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

公开(公告)号：US11496129B2

公开(公告)日：2022-11-08

申请号：US17340604

申请日：2021-06-07

申请人： IDEAL POWER INC.

发明人： Alireza Mojab

IPC分类号： H03K17/66 ,  H02M11/00 ,  H01L27/082

摘要： Current sharing among bidirectional double-base bipolar junction transistors. One example is a method comprising: conducting current through a first bidirectional double-base bipolar junction transistor (first B-TRAN); conducting current through a second B-TRAN the second B-TRAN coupled in parallel with the first B-TRAN; measuring a value indicative of conduction of the first B-TRAN, and measuring a value indicative of conduction of the second B-TRAN; and adjusting a current flow through the first B-TRAN, the adjusting responsive to the value indicative of conduction of the first B-TRAN being different than the value indicative of conduction of the second B-TRAN.