公开(公告)号：US20130313548A1

公开(公告)日：2013-11-28

申请号：US13862568

申请日：2013-04-15

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masashi KASAMI

IPC: H01L29/26

CPC classification number: H01L29/263 ,  C23C14/086 ,  H01L29/7869

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+X)=0.29 to 0.99  (2) Zn/(X+Zn)=0.29 to 0.99  (3).

公开(公告)号：US20140167033A1

公开(公告)日：2014-06-19

申请号：US14085199

申请日：2013-11-20

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Futoshi UTSUNO ,  Kazuyoshi INOUE ,  Hirokazu KAWASHIMA ,  Masashi KASAMI ,  Koki YANO ,  Kota TERAI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/242 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/441 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/7869

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract translation: 氧化物烧结体包括固溶于其中的氧化铟和镓，所述氧化物烧结体的原子比“Ga /（Ga + In）”为0.001〜0.12，含有基于80原子％以上的量的铟和镓 总金属原子，并具有In2O3二氧化硅结构。