公开(公告)号：US20140167033A1

公开(公告)日：2014-06-19

申请号：US14085199

申请日：2013-11-20

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Futoshi UTSUNO ,  Kazuyoshi INOUE ,  Hirokazu KAWASHIMA ,  Masashi KASAMI ,  Koki YANO ,  Kota TERAI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/242 ,  C04B35/01 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/441 ,  C04B2235/443 ,  C04B2235/449 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6585 ,  C04B2235/72 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/7869

Abstract: An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio “Ga/(Ga+In)” of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an In2O3 bixbyite structure.

Abstract translation: 氧化物烧结体包括固溶于其中的氧化铟和镓，所述氧化物烧结体的原子比“Ga /（Ga + In）”为0.001〜0.12，含有基于80原子％以上的量的铟和镓 总金属原子，并具有In2O3二氧化硅结构。

公开(公告)号：US20130313548A1

公开(公告)日：2013-11-28

申请号：US13862568

申请日：2013-04-15

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masashi KASAMI

IPC: H01L29/26

CPC classification number: H01L29/263 ,  C23C14/086 ,  H01L29/7869

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+X)=0.29 to 0.99  (2) Zn/(X+Zn)=0.29 to 0.99  (3).

公开(公告)号：US20130285053A1

公开(公告)日：2013-10-31

申请号：US13926402

申请日：2013-06-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Hirokazu KAWASHIMA ,  Koki YANO ,  Futoshi UTSUNO ,  Kazuyoshi INOUE

IPC: H01L21/02 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C04B35/01 ,  C04B35/453 ,  C04B35/6262 ,  C04B35/62655 ,  C04B35/62695 ,  C04B37/026 ,  C04B2235/3229 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3287 ,  C04B2235/3293 ,  C04B2235/40 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6027 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/6586 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/761 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  C04B2235/9661 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/407 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869 ,  Y10T428/31507

Abstract: Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)

Abstract translation: 公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。 还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。 进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。 铟（In），镓（Ga）和锌（Zn）的组成量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75

公开(公告)号：US20210020784A1

公开(公告)日：2021-01-21

申请号：US17030618

申请日：2020-09-24

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE

IPC: H01L29/786 ,  C23C14/34 ,  C23C14/16 ,  C22C30/04 ,  C22C30/06 ,  H01L29/66 ,  H01L21/02

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

公开(公告)号：US20160201187A1

公开(公告)日：2016-07-14

申请号：US15075787

申请日：2016-03-21

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE

IPC: C23C14/34 ,  C22C30/04 ,  C22C30/06 ,  C23C14/16

Abstract: A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Abstract translation: 一种场效应晶体管，包括：衬底，至少栅电极，栅极绝缘膜，半导体层，用于半导体层的保护层，设置在衬底上的源电极和漏电极，其中源电极和 漏电极与其间的半导体层连接，栅极绝缘膜位于栅电极和半导体层之间，保护层位于半导体层的至少一个表面上，半导体层包括含有In原子的氧化物，Sn原子 和Zn原子，Zn /（In + Sn + Zn）的原子组成比为25原子％以上且75原子％以下，Sn /（In + Sn + Zn）的原子组成比小于50 原子％。

公开(公告)号：US20130112971A1

公开(公告)日：2013-05-09

申请号：US13729535

申请日：2012-12-28

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA

IPC: H01L29/22 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/2206 ,  C04B35/453 ,  C23C14/3414 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L29/7869 ,  H01L29/78693 ,  Y10T428/10

Abstract: A composite oxide sintered body includes In, Zn, and Sn, and has a relative density of 90% or more, an average crystal grain size of 10 μm or less, and a bulk resistance of 30 mΩcm or less, the number of tin oxide aggregate particles having a diameter of 10 μm or more being 2.5 or less per mm2 of the composite oxide sintered body.

Abstract translation: 复合氧化物烧结体包括In，Zn和Sn，相对密度为90％以上，平均结晶粒径为10μm以下，体积电阻为30mOmegacm以下，氧化锡的数量 该复合氧化物烧结体的直径为10μm以上的骨料粒子为2.5个/ mm 2以下。