公开(公告)号：US11905618B2

公开(公告)日：2024-02-20

申请号：US17249597

申请日：2021-03-05

申请人： II-VI Delaware, Inc

发明人： Xueping Xu ,  Ilya Zwieback ,  Avinash Gupta ,  Varatharajan Rengarajan

IPC分类号： C30B25/02 ,  C30B29/36 ,  C30B23/06 ,  C01B33/025

CPC分类号： C30B25/02 ,  C01B33/025 ,  C30B23/06 ,  C30B29/36 ,  Y10T117/00

摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

公开(公告)号：US11149359B2

公开(公告)日：2021-10-19

申请号：US16368977

申请日：2019-03-29

申请人： II-VI Delaware, Inc

发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/06

摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

公开(公告)号：US20210189591A1

公开(公告)日：2021-06-24

申请号：US17249597

申请日：2021-03-05

申请人： II-VI Delaware, Inc

发明人： Xueping Xu ,  Iilya Zwieback ,  Avinash Gupta ,  Varatharajan Rengarajan

IPC分类号： C30B25/02 ,  C30B29/36 ,  C30B23/06 ,  C01B33/025

摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

公开(公告)号：US10793972B1

公开(公告)日：2020-10-06

申请号：US16031917

申请日：2018-07-10

申请人： II-VI Delaware, Inc.

发明人： Xueping Xu ,  Avinash Gupta ,  Mark Ramm ,  Ilya Zwieback ,  Varatharajan Rengarajan ,  Gary E. Ruland

IPC分类号： C30B23/06 ,  C30B29/36

摘要： A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.

公开(公告)号：US11761117B2

公开(公告)日：2023-09-19

申请号：US17447742

申请日：2021-09-15

申请人： II-VI Delaware, Inc

发明人： Avinash Gupta ,  Ilya Zwieback ,  Edward Semenas ,  Marcus Getkin ,  Patrick Flynn

IPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/06

CPC分类号： C30B29/36 ,  C30B23/005 ,  C30B23/06 ,  C30B23/066

摘要： A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.