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1.发明授权公开(公告)号：US11035054B2
公开(公告)日：2021-06-15
申请号：US16458385
申请日：2019-07-01
申请人： II-VI Delaware, Inc.
IPC分类号： C30B25/02 , C30B29/36 , C30B23/06 , C01B33/025
摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.
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公开(公告)号：US10793972B1
公开(公告)日：2020-10-06
申请号：US16031917
申请日：2018-07-10
申请人： II-VI Delaware, Inc.
发明人： Xueping Xu , Avinash Gupta , Mark Ramm , Ilya Zwieback , Varatharajan Rengarajan , Gary E. Ruland
摘要： A physical vapor transport (PVT) apparatus suitable for growing SiC boules comprises a crystal growth chamber (with a defined central vertical axis), a sealed crucible containing sublimation source material and including a seed fixture disposed in an offset position with respect to the central vertical axis of the apparatus, and a heat source disposed to surround the crystal growth chamber. The heat source is configured to raise the temperature within the sealed crucible such that the source material vaporizes and deposits on the seed wafer. The offset position of the seed fixture creates a radial temperature gradient across an exposed surface of the seed as the crystal boule is grown.
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3.发明授权公开(公告)号：US11905618B2
公开(公告)日：2024-02-20
申请号：US17249597
申请日：2021-03-05
申请人： II-VI Delaware, Inc
IPC分类号： C30B25/02 , C30B29/36 , C30B23/06 , C01B33/025
CPC分类号： C30B25/02 , C01B33/025 , C30B23/06 , C30B29/36 , Y10T117/00
摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.
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公开(公告)号：US12060650B2
公开(公告)日：2024-08-13
申请号：US17249395
申请日：2021-03-01
申请人： II-VI Delaware, Inc
IPC分类号： C30B23/02 , C01B32/956 , C04B35/573 , C04B35/65 , C30B29/36 , G02F1/00 , H01L29/36
CPC分类号： C30B23/02 , C01B32/956 , C04B35/573 , C04B35/65 , C30B29/36 , C04B2235/3205 , C04B2235/3826 , C04B2235/3839 , C04B2235/425 , C04B2235/722 , C04B2235/76 , C04B2235/9661 , G02F1/0063 , H01L29/36
摘要： An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.
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5.发明申请公开(公告)号：US20210189591A1
公开(公告)日：2021-06-24
申请号：US17249597
申请日：2021-03-05
申请人： II-VI Delaware, Inc
IPC分类号： C30B25/02 , C30B29/36 , C30B23/06 , C01B33/025
摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.
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公开(公告)号：US20210269937A1
公开(公告)日：2021-09-02
申请号：US17029746
申请日：2020-09-23
申请人： II-VI DELAWARE, INC.
IPC分类号： C30B23/02 , C30B29/36 , C04B35/573 , C04B35/65
摘要： The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm−1 at a wavelength in a range between about 400 nm to about 800 nm.
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公开(公告)号：USRE48378E1
公开(公告)日：2021-01-05
申请号：US15583538
申请日：2017-05-01
申请人： II-VI Delaware, Inc.
发明人： Ilya Zwieback , Ping Wu , Varatharajan Rengarajan , Avinash K. Gupta , Thomas E. Anderson , Gary E. Ruland , Andrew E. Souzis , Xueping Xu
摘要： In a crystal growth apparatus and method, polycrystalline source material and a seed crystal are introduced into a growth ambient comprised of a growth crucible disposed inside of a furnace chamber. In the presence of a first sublimation growth pressure, a single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a first gas that includes a reactive component that reacts with and removes donor and/or acceptor background impurities from the growth ambient during said sublimation growth. Then, in the presence of a second sublimation growth pressure, the single crystal is sublimation grown on the seed crystal via precipitation of sublimated source material on the seed crystal in the presence of a flow of a second gas that includes dopant vapors, but which does not include the reactive component.
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公开(公告)号：US12006591B2
公开(公告)日：2024-06-11
申请号：US17029746
申请日：2020-09-23
申请人： II-VI Delaware, Inc.
IPC分类号： C30B23/02 , C01B32/956 , C04B35/573 , C04B35/65 , C30B29/36 , G02F1/00 , H01L29/36
CPC分类号： C30B23/02 , C01B32/956 , C04B35/573 , C04B35/65 , C30B29/36 , C04B2235/3205 , C04B2235/3826 , C04B2235/3839 , C04B2235/425 , C04B2235/722 , C04B2235/76 , C04B2235/9661 , G02F1/0063 , H01L29/36
摘要： The present disclosure generally relates to silicon carbide crystals which may be used in optical applications, and to methods for producing the same. In one form, a composition includes an aluminum doped silicon carbide crystal having residual nitrogen and boron impurities. The concentration of aluminum in the silicon carbide crystal is greater than the combined concentrations of nitrogen and boron in the silicon carbide crystal, and the silicon carbide crystal includes an optical absorption coefficient of less than about 0.4 cm−1 at a wavelength in a range between about 400 nm to about 800 nm.
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公开(公告)号：US20210269938A1
公开(公告)日：2021-09-02
申请号：US17249395
申请日：2021-03-01
申请人： II-VI Delaware, Inc.
IPC分类号： C30B23/02 , C04B35/65 , C30B29/36 , C04B35/573
摘要： An optical device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype, for transmitting light having a wavelength in a range of from 420 nm to 4.5 μm. The device may include a window, lens, prism, or waveguide. A system includes a source for generating light having a wavelength in a range of from 420 nm to 4.5 μm, and a device for receiving and transmitting the light, where the device includes a vanadium compensated, high resistivity, SiC single crystal of 6H or 4H polytype. The disclosure also relates to crystals and methods for optical applications, including an aluminum doped SiC crystal having residual nitrogen and boron impurities, where the aluminum concentration is greater than the combined concentrations of nitrogen and boron, and where an optical absorption coefficient is less than about 0.4 cm−1 at a wavelength between about 400 nm to about 800 nm.
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