公开(公告)号：US20240110307A1

公开(公告)日：2024-04-04

申请号：US18482847

申请日：2023-10-06

申请人： MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

发明人： Yu WANG ,  Zhenxing LIANG ,  Min LI ,  Peng GU

IPC分类号： C30B23/00 ,  C30B23/06 ,  C30B29/36 ,  C30B33/06

CPC分类号： C30B23/002 ,  C30B23/06 ,  C30B29/36 ,  C30B33/06 ,  Y10T117/00 ,  Y10T117/1008

摘要： The present disclosure provides a method for producing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

公开(公告)号：US12009206B2

公开(公告)日：2024-06-11

申请号：US18112750

申请日：2023-02-22

申请人： National University Corporation Nagoya University ,  TOYODA GOSEI CO., LTD

发明人： Shugo Nitta ,  Yoshio Honda ,  Kentaro Nagamatsu ,  Hiroshi Amano ,  Naoki Fujimoto

IPC分类号： C30B35/00 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  H01L21/02 ,  C30B23/02 ,  C30B23/06

CPC分类号： H01L21/02518 ,  C30B29/16 ,  C30B29/36 ,  C30B29/38 ,  C30B35/007 ,  C30B23/02 ,  C30B23/06 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/00

摘要： A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

公开(公告)号：US09797066B2

公开(公告)日：2017-10-24

申请号：US13824731

申请日：2011-11-10

申请人： Masato Ohnishi

发明人： Masato Ohnishi

IPC分类号： C30B25/12 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687

CPC分类号： C30B25/12 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/68735 ,  Y10T117/00 ,  Y10T117/10

摘要： A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.

公开(公告)号：US20130306109A1

公开(公告)日：2013-11-21

申请号：US13982628

申请日：2011-03-29

申请人： Kenji Okita

发明人： Kenji Okita

IPC分类号： C30B35/00

CPC分类号： C30B35/007 ,  C30B15/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48 ,  C30B35/00 ,  Y10T117/00 ,  Y10T117/10

摘要： Dust that is accumulated in an exhaust passage provided in a chamber, the exhaust passage for discharging gas in the chamber of a semiconductor crystal manufacturing device, is removed by being sucked from the outside of the chamber. Moreover, an opening and closing valve for cleaning that is detachably attached to an opening of the exhaust passage, the opening facing the chamber, is opened and closed intermittently in a suction state. Furthermore, the opening and closing valve for cleaning is driven by a valve driving unit. The dust accumulated in the exhaust passage is removed efficiently, whereby the time required to clean the exhaust passage is shortened and fluctuations of the pressure inside the chamber when a semiconductor crystal is manufactured are suppressed.

摘要翻译： 积聚在设置在室中的排气通道中的灰尘，用于排出半导体晶体制造装置的室中的气体排出通道，通过从室外吸引而被除去。 此外，在抽吸状态下间歇地打开和关闭用于清洁的打开和关闭阀，该打开和关闭阀可拆卸地附接到排气通道的开口，面对腔室的开口。 此外，用于清洁的打开和关闭阀由阀驱动单元驱动。 积聚在排气通道中的灰尘被有效地去除，从而抑制了清洁排气通道所需的时间，并且抑制了制造半导体晶体时室内压力的波动。

公开(公告)号：US20240150931A1

公开(公告)日：2024-05-09

申请号：US18415291

申请日：2024-01-17

申请人： II-VI ADVANCED MATERIALS, LLC

发明人： Xueping XU ,  Iiya ZWIEBACK ,  Avinash GUPTA ,  Varatharajan RENGARAJAN

IPC分类号： C30B25/02 ,  C01B33/025 ,  C30B23/06 ,  C30B29/36

CPC分类号： C30B25/02 ,  C01B33/025 ,  C30B23/06 ,  C30B29/36 ,  Y10T117/00

摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

公开(公告)号：US20230160093A1

公开(公告)日：2023-05-25

申请号：US18151989

申请日：2023-01-09

申请人： GlobalWafers Co., Ltd.

发明人： William L. Luter ,  Hariprasad Sreedharamurthy ,  Stephan Haringer ,  Richard J. Phillips ,  Nan Zhang ,  Yu-Chaio Wu

IPC分类号： C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B29/06 ,  C30B35/00

CPC分类号： C30B15/04 ,  C30B15/10 ,  C30B15/14 ,  C30B29/06 ,  C30B35/002 ,  C30B35/007 ,  Y10T117/00 ,  Y10T117/10

摘要： Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.

公开(公告)号：US20170314162A1

公开(公告)日：2017-11-02

申请号：US15654266

申请日：2017-07-19

申请人： SUMCO CORPORATION

发明人： Kenji OKITA

IPC分类号： C30B35/00 ,  C30B15/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

CPC分类号： C30B35/007 ,  C30B15/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48 ,  C30B35/00 ,  Y10T117/00 ,  Y10T117/10

摘要： Dust that is accumulated in an exhaust passage provided in a chamber, the exhaust passage for discharging gas in the chamber of a semiconductor crystal manufacturing device, is removed by being sucked from the outside of the chamber. Moreover, an opening and closing valve for cleaning that is detachably attached to an opening of the exhaust passage, the opening facing the chamber, is opened and closed intermittently in a suction state. Furthermore, the opening and closing valve for cleaning is driven by a valve driving unit. The dust accumulated in the exhaust passage is removed efficiently, whereby the time required to clean the exhaust passage is shortened and fluctuations of the pressure inside the chamber when a semiconductor crystal is manufactured are suppressed.

公开(公告)号：US09738992B2

公开(公告)日：2017-08-22

申请号：US13982628

申请日：2011-03-29

申请人： Kenji Okita

发明人： Kenji Okita

IPC分类号： C30B35/00 ,  C30B15/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48

CPC分类号： C30B35/007 ,  C30B15/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/42 ,  C30B29/48 ,  C30B35/00 ,  Y10T117/00 ,  Y10T117/10

摘要： Dust that is accumulated in an exhaust passage provided in a chamber, the exhaust passage for discharging gas in the chamber of a semiconductor crystal manufacturing device, is removed by being sucked from the outside of the chamber. Moreover, an opening and closing valve for cleaning that is detachably attached to an opening of the exhaust passage, the opening facing the chamber, is opened and closed intermittently in a suction state. Furthermore, the opening and closing valve for cleaning is driven by a valve driving unit. The dust accumulated in the exhaust passage is removed efficiently, whereby the time required to clean the exhaust passage is shortened and fluctuations of the pressure inside the chamber when a semiconductor crystal is manufactured are suppressed.

公开(公告)号：US11905618B2

公开(公告)日：2024-02-20

申请号：US17249597

申请日：2021-03-05

申请人： II-VI Delaware, Inc

发明人： Xueping Xu ,  Ilya Zwieback ,  Avinash Gupta ,  Varatharajan Rengarajan

IPC分类号： C30B25/02 ,  C30B29/36 ,  C30B23/06 ,  C01B33/025

CPC分类号： C30B25/02 ,  C01B33/025 ,  C30B23/06 ,  C30B29/36 ,  Y10T117/00

摘要： In an apparatus and method growing a SiC single crystal, a PVT growth apparatus is provided with a single crystal SiC seed and a SiC source material positioned in spaced relation in a growth crucible. A resistance heater heats the growth crucible such that the SiC source material sublimates and is transported via a temperature gradient that forms in the growth crucible in response to the heater heating the growth crucible to the single crystal SiC seed where the sublimated SiC source material condenses forming a growing SiC single crystal. Purely axial heat fluxes passing through the bottom and the top of the growth crucible form a flat isotherm at least at a growth interface of the growing SiC single crystal on the single crystal SiC seed.

公开(公告)号：US11846039B2

公开(公告)日：2023-12-19

申请号：US17417496

申请日：2019-09-11

申请人： SUMCO CORPORATION

发明人： Kazuhiro Narahara ,  Masayuki Tsuji ,  Haku Komori

IPC分类号： C30B25/12 ,  C30B29/06 ,  C23C16/24 ,  C23C16/458 ,  C30B25/20

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4581 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/20 ,  Y10T117/00

摘要： A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.