公开(公告)号：US20250133815A1

公开(公告)日：2025-04-24

申请号：US18923487

申请日：2024-10-22

Applicant: IMEC VZW

Inventor： Antony Premkumar PETER ,  Alfonso SEPULVEDA MARQUEZ ,  Boon Teik CHAN ,  Steven DEMUYNCK ,  Lucas PETERSEN BARBOSA LIMA ,  Victor Hugo VEGA GONZALEZ

IPC: H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The disclosure relates to a method for processing a complementary field effect transistor, CFET, device. The method comprises the steps of forming at least one fin structure on a substrate, wherein the at least one fin structure comprises a horizontal top surface and two vertically oriented side surfaces between the top surface and the substrate, and wherein the at least one fin structure comprises a first layer stack and a second layer stack above the first layer stack, and forming a gate dielectric layer with a non-uniform layer thickness around the at least one fin structure, wherein the layer thickness of the gate dielectric layer which is arranged on the top surface of the at least one fin structure is larger than the layer thickness of the gate dielectric layer which is arranged on the side surfaces of the at least one fin structure.

公开(公告)号：US20250151375A1

公开(公告)日：2025-05-08

申请号：US18934622

申请日：2024-11-01

Applicant: IMEC VZW

Inventor： Antony Premkumar PETER ,  Lucas PETERSEN BARBOSA LIMA ,  Steven DEMUYNCK ,  Alfonso SEPULVEDA MARQUEZ

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A method for processing a CFET device is provided that includes: (i) forming a fin structure that includes a first layer stack below a second layer stack, the first layer stack including a first channel layer and the second layer stack including a second channel layer; (ii) forming a set of gate structures around the fin structure and perpendicular to the fin structure and spaced apart from each other, the set of gate structures covering the fin structure in channel regions and exposing the fin structure in fin cut regions that alternate with the channel regions; (iii) at least partially removing the fin structure in the fin cut regions to form preliminary fin cuts; and (iv) forming a cover layer which partially covers side walls of recess(es) formed by the preliminary fin cuts