公开(公告)号：US20250133815A1

公开(公告)日：2025-04-24

申请号：US18923487

申请日：2024-10-22

Applicant: IMEC VZW

Inventor： Antony Premkumar PETER ,  Alfonso SEPULVEDA MARQUEZ ,  Boon Teik CHAN ,  Steven DEMUYNCK ,  Lucas PETERSEN BARBOSA LIMA ,  Victor Hugo VEGA GONZALEZ

IPC: H01L21/8234 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: The disclosure relates to a method for processing a complementary field effect transistor, CFET, device. The method comprises the steps of forming at least one fin structure on a substrate, wherein the at least one fin structure comprises a horizontal top surface and two vertically oriented side surfaces between the top surface and the substrate, and wherein the at least one fin structure comprises a first layer stack and a second layer stack above the first layer stack, and forming a gate dielectric layer with a non-uniform layer thickness around the at least one fin structure, wherein the layer thickness of the gate dielectric layer which is arranged on the top surface of the at least one fin structure is larger than the layer thickness of the gate dielectric layer which is arranged on the side surfaces of the at least one fin structure.