公开(公告)号：US20230165159A1

公开(公告)日：2023-05-25

申请号：US18058010

申请日：2022-11-22

Applicant: IMEC VZW

Inventor： Jose Diogo Costa ,  Sebastien Couet ,  Geoffrey Pourtois ,  Benoit Van Troeye

IPC: H10N50/10 ,  G11C11/16 ,  H10N50/80

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02

Abstract: The disclosure relates to spin orbit torque (SOT) magnetic random access (MRAM) devices. A magnetic structure for a SOT-MRAM device and a method for fabricating the magnetic structure are presented. The magnetic structure comprises a SOT layer and a magnetic tunnel junction (MTJ) structure arranged on the SOT layer. The SOT layer comprises a material combination of a bismuth-based material and a metal having a melting point of at least 1000° C. As a result, the SOT is thermally stable and also shows a large spin Hall angle (SHA).