中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

14 records (took 0.014 seconds)

    Spintronic device with synthetic antiferromagnet hybrid storage layer
    1.
    发明授权
    Spintronic device with synthetic antiferromagnet hybrid storage layer 有权

    公开(公告)号：US12096700B2

    公开(公告)日：2024-09-17

    申请号：US16909718

    申请日：2020-06-23

    Applicant: IMEC vzw

    Inventor： Sebastien Couet ,  Van Dai Nguyen

    IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    CPC classification number: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to magnetic memory and/or logic devices. In an aspect, a spintronic device comprises a tunnel barrier, a storage layer provided on the tunnel barrier, and a seed layer provided on the storage layer. The storage layer includes a first magnetic layer having a first crystallographic orientation provided on the tunnel barrier, a spacer layer provided on the first magnetic layer, a second magnetic layer having a second crystallographic orientation provided on the spacer layer and exchange coupled to the first magnetic layer, an antiferromagnetic coupling layer provided on the second magnetic layer, and a third magnetic layer having the second crystallographic orientation provided on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer.

    Magnetoresistive device comprising chromium
    2.
    发明授权
    Magnetoresistive device comprising chromium 有权

    公开(公告)号：US10325710B2

    公开(公告)日：2019-06-18

    申请号：US15860478

    申请日：2018-01-02

    Applicant: IMEC VZW

    Inventor： Johan Swerts ,  Sebastien Couet

    IPC: G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

    Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

    SPINTRONIC DEVICE
    3.
    发明申请
    SPINTRONIC DEVICE 有权

    公开(公告)号：US20210126190A1

    公开(公告)日：2021-04-29

    申请号：US17079264

    申请日：2020-10-23

    Applicant: IMEC vzw

    Inventor： Sebastien Couet ,  Siddharth Rao ,  Robert Carpenter

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10

    Abstract: The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.

    MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM
    5.
    发明申请
    MAGNETORESISTIVE DEVICE COMPRISING CHROMIUM 审中-公开

    公开(公告)号：US20180190419A1

    公开(公告)日：2018-07-05

    申请号：US15860478

    申请日：2018-01-02

    Applicant: IMEC VZW

    Inventor： Johan Swerts ,  Sebastien Couet

    IPC: H01F10/30 ,  H01F10/13 ,  G11B5/39 ,  B82Y25/00

    CPC classification number: H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  H01F10/138 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/222

    Abstract: The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

    Spintronic device
    6.
    发明授权
    Spintronic device 有权

    公开(公告)号：US11737371B2

    公开(公告)日：2023-08-22

    申请号：US17079264

    申请日：2020-10-23

    Applicant: IMEC vzw

    Inventor： Sebastien Couet ,  Siddharth Rao ,  Robert Carpenter

    IPC: H10N50/80 ,  H10B61/00 ,  H10N50/85

    CPC classification number: H10N50/80 ,  H10B61/00 ,  H10N50/85

    Abstract: The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.

    MAGNETIC DOMAIN WALL-BASED MEMORY DEVICE WITH TRACK-CROSSING ARCHITECTURE
    8.
    发明公开
    MAGNETIC DOMAIN WALL-BASED MEMORY DEVICE WITH TRACK-CROSSING ARCHITECTURE 审中-公开

    公开(公告)号：US20230145983A1

    公开(公告)日：2023-05-11

    申请号：US18051719

    申请日：2022-11-01

    Applicant: IMEC vzw

    Inventor： Sebastien Couet ,  Van Dai Nguyen ,  Gouri Sankar Kar ,  Siddharth Rao ,  Jose Diogo Costa

    IPC: G11C11/16 ,  H10N50/10 ,  H10B61/00

    CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/10 ,  H10B61/00

    Abstract: The disclosed technology relates to a magnetic domain wall-based memory device including a combination of at least one magnetic domain wall track and at least one spin orbit torque (SOT) track, which are arranged in a crossing architecture. The SOT track can include a first strip of a patterned SOT generating layer, wherein the first strip extends into a first direction and is configured to pass a first current along the first direction. The magnetic domain wall track can include a second strip of the patterned SOT generating layer and a first magnetic strip of a patterned magnetic free layer, wherein the second strip extends along a second direction and intersects with the first strip in a first crossing region. The first magnetic strip can be provided on the second strip including the first crossing region and can be configured to pass a second current along the second direction. Further, a first and a second MTJ structure can be provided on the first magnetic strip and can be separated in the second direction. The first MTJ structure can be provided above the first crossing region and can be provided with a first voltage gate.

Patent Agency Ranking