公开(公告)号：US20170179373A1

公开(公告)日：2017-06-22

申请号：US15387350

申请日：2016-12-21

Applicant: IMEC VZW

Inventor： Johan Swerts ,  Mauricio MANFRINI ,  Christoph ADELMANN

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/02 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H03K19/18 ,  H03K19/23

Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (STMG), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. A magnetic tunneling junction (MTJ) is formed in each of the input zones and the output zone, where the MTJ includes a non-magnetic layer interposed between a free layer stack and a hard layer. The free layer stack in turn includes a bulk perpendicular magnetic anisotropy (PMA) layer on a seed layer, a magnetic layer formed on and in contact with the bulk PMA layer, and a non-magnetic layer formed on the magnetic layer. Each of the bulk PMA layer and the seed layer is configured as a common layer for each of the input zones and the output zone.