公开(公告)号：US20230197761A1

公开(公告)日：2023-06-22

申请号：US18068775

申请日：2022-12-20

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Deniz Sabuncuoglu Tezcan ,  Pawel Malinowski ,  Gauri Karve

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H10K39/32

Abstract: An example includes a method for producing a multipixel detector, the method including: providing a bottom layer including a first and a second bottom electrode, depositing an electrically insulating layer on the bottom layer, forming a first opening through the electrically insulating layer, depositing a first photon absorbing material in the first opening, forming a second opening through the electrically insulating layer, depositing a second photon absorbing material in the second opening, planarizing the deposited electrically insulating layer, the first photon absorbing material, and the second photon absorbing material to form a flat surface, and forming a common top electrode on top of the flat surface.

公开(公告)号：US20220140276A1

公开(公告)日：2022-05-05

申请号：US17502708

申请日：2021-10-15

Applicant: Imec vzw

Inventor： Tung Huei Ke ,  David Cheyns ,  Pawel Malinowski

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: A semiconductor device comprises a substrate, a first hole-transporting layer over the substrate, a first electron-transporting layer on the first hole-transporting layer, and a second hole-transporting layer over the first electron-transporting layer. At least one of the first electron-transporting layer and the second hole-transporting layer has an organic component. The device is characterized by one of the following: a metal oxide layer present on the first electron-transporting layer, wherein a second electron-transporting layer is on the metal oxide layer, wherein the second hole-transporting layer is on the second electron-transporting layer, or the second hole transporting layer has a first p-doped hole-transporting surface present on the first electron-transporting, layer and a second p-doped hole-transporting surface facing away from the first p-doped hole-transporting surface, or the first electron-transporting layer is on a top surface and on sidewalls of the first hole-transporting layer.

公开(公告)号：US10862036B2

公开(公告)日：2020-12-08

申请号：US15740265

申请日：2016-06-27

Applicant: IMEC VZW ,  FUJIFILM CORPORATION

Inventor： Tung Huei Ke ,  Pawel Malinowski ,  Atsushi Nakamura

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/42 ,  H01L51/56

Abstract: At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.