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公开(公告)号：US12087994B2
公开(公告)日：2024-09-10
申请号：US17450592
申请日：2021-10-12
发明人： Antoine Pacco , Massimo Mongillo , Anton Potocnik , Danny Wan , Jeroen Verjauw
CPC分类号： H01P7/00 , H01P11/008
摘要： A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.
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公开(公告)号：US20220115759A1
公开(公告)日：2022-04-14
申请号：US17450592
申请日：2021-10-12
发明人： Antoine Pacco , Massimo Mongillo , Anton Potocnik , Danny Wan , Jeroen Verjauw
摘要： A method for forming a modified resonator is provided. In one aspect, the method includes obtaining a resonator on top of a substrate, thereby forming an interface area between a bottom surface of the resonator and a top surface of the substrate. The resonator can include niobium or tantalum. The method also includes contacting the resonator and the substrate with a liquid acidic etching solution selected so as to have a higher etch rate towards the substrate than towards the resonator and a nonzero etch rate towards the resonator.
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