公开(公告)号：US10352690B2

公开(公告)日：2019-07-16

申请号：US15845976

申请日：2017-12-18

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chien-Wen Chen ,  Mao-Sheng Huang

IPC: G01B11/24 ,  G01B11/10 ,  G01B11/08 ,  G01B21/04 ,  G01B9/02

Abstract: A measuring apparatus for measuring surface topography of the slides to be measured of a guide rail is provided. The measuring apparatus includes a plurality of detecting probe and at least one moving device. The detecting probes are mounted on a probe support according to the surface topography of the slides to be measured. The moving device shifts the probe support or the slides to be measured on the cross section of the guide rail so that the detecting probe has a displacement relative to the slides to be measured. Each of the detecting probes has a corresponding coordinate system, and the corresponding coordinate system is different from each other. A standard part is utilized to correct deviations among the corresponding coordinate systems to the same coordinate system, and then the same coordinate system as a benchmark to measure the surface topography of the slides to be measured.

公开(公告)号：US09857314B1

公开(公告)日：2018-01-02

申请号：US15392713

申请日：2016-12-28

Applicant: Industrial Technology Research Institute

Inventor： Fu-Cheng Yang ,  Chia-Liang Yeh ,  Wei-Hsiung Tsai ,  Keng-Li Lin ,  Yeou-Sung Lin ,  Mao-Sheng Huang

IPC: G01J3/00 ,  G01N21/958 ,  G01N21/47 ,  G01N21/95

CPC classification number: G01N21/958 ,  G01N21/4788 ,  G01N2021/9513

Abstract: A device and method for detecting crystal quality of a low temperature poly-silicon (LTPS) backplane are provided, the method including: projecting narrowband light to the LTPS backplane; performing image capturing of each position on a surface of the LTPS backplane at a first angle in a first axial direction to obtain a first diffraction image, the first angle being an angle of maximum diffraction light intensity in the first axial direction; performing another image capturing of each position on the surface of the LTPS backplane at a second angle in a second axial direction to obtain a second diffraction image, the second angle being an angle of maximum diffraction light intensity in the second axial direction; and determining the crystal quality of the LTPS backplane based on a diffraction light intensity distribution obtained from the first and second diffraction images.