FERROEOLECTRIC MEMORIES
    1.
    发明申请

    公开(公告)号:US20220359549A1

    公开(公告)日:2022-11-10

    申请号:US17368686

    申请日:2021-07-06

    Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer.

    STRUCTURES AND MANUFACTURE METHOD OF ELECTROCHEMICAL UNITS

    公开(公告)号:US20170343506A1

    公开(公告)日:2017-11-30

    申请号:US15352242

    申请日:2016-11-15

    Abstract: A structure of an electrochemical unit includes a substrate, a first metal layer disposed on the substrate, and an array of electrochemical cells disposed on the first metal layer. The array of the electrochemical cells includes a plurality of electrochemical cells. Each of the electrochemical cells includes the first metal layer disposed on the substrate, a first electrode disposed on the first metal layer, a polymer layer disposed on the substrate and adjacent to the first metal layer and the first electrode. A second metal layer is disposed on the polymer layer, and a second electrode is disposed on the second metal layer. A pore is constituted between the polymer layers of every the two electrochemical cells. A cavity located above the first electrode is defined between every the two electrochemical cells, wherein the cavity is communicated with the pore.

Patent Agency Ranking