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    Image sensor
    1.
    发明授权
    Image sensor 有权

    公开(公告)号：US10403657B2

    公开(公告)日：2019-09-03

    申请号：US15813088

    申请日：2017-11-14

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

    IPC: H01L27/146

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20170186818A1

    公开(公告)日：2017-06-29

    申请号：US14983445

    申请日：2015-12-29

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang

    IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/0034 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/422 ,  H01L51/424 ,  H01L51/441 ,  H01L2251/301 ,  H01L2251/303 ,  Y02E10/549

    Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.

    Image sensor
    4.
    发明授权
    Image sensor 有权

    公开(公告)号：US10038033B2

    公开(公告)日：2018-07-31

    申请号：US14983445

    申请日：2015-12-29

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang

    IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/0034 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/422 ,  H01L51/424 ,  H01L51/441 ,  H01L2251/301 ,  H01L2251/303 ,  Y02E10/549

    Abstract: An image sensor is provided. The image sensor includes a pixel sensing circuit corresponding to at least a first pixel region and a second pixel region adjacent to each other, a pixel electrode disposed on the pixel sensing circuit, and a opto electrical conversion layer including a photo sensing layer and a carrier transport layer disposed on the pixel sensing circuit and the pixel electrode. The pixel electrode is electrically connected to the pixel sensing circuit and includes a plurality of first electrodes and a plurality of second electrodes. The first electrodes and the second electrodes are coplanar and have different polarities. The first electrode or the second electrode located in the first pixel region is adjacent to the first electrode or the second electrode having the same polarity located in the second pixel region.

    Image sensor and manufacturing method thereof
    5.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10483326B2

    公开(公告)日：2019-11-19

    申请号：US15850809

    申请日：2017-12-21

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Sheng-Min Yu ,  Wen-Ching Sun ,  Pei-Wen Yen ,  Yan-Rung Lin

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/00

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

    Image sensor and image sensing method
    6.
    发明授权
    Image sensor and image sensing method 有权

    公开(公告)号：US10477122B2

    公开(公告)日：2019-11-12

    申请号：US15394826

    申请日：2016-12-30

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Pei-Wen Yen ,  Siou-Cheng Lou ,  Kai-Ping Chuang

    IPC: H04N5/347 ,  H04N5/353 ,  H04N5/374 ,  H04N5/355

    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.

    IMAGE SENSOR AND IMAGE SENSING METHOD
    7.
    发明申请
    IMAGE SENSOR AND IMAGE SENSING METHOD 审中-公开

    公开(公告)号：US20180152645A1

    公开(公告)日：2018-05-31

    申请号：US15394826

    申请日：2016-12-30

    Applicant: Industrial Technology Research Institute

    Inventor： Yan-Rung Lin ,  Pei-Wen Yen ,  Siou-Cheng Lou ,  Kai-Ping Chuang

    IPC: H04N5/347 ,  H04N5/374 ,  H04N5/353

    Abstract: An image sensor including a plurality of pixels and a plurality of pixel sensing circuits is provided. The pixels are arranged in a pixel array. The pixels are configured to sense an image to obtain a plurality of reference pictures. The pixels include a plurality of pixel types. The pixel sensing circuits are respectively and electrically connected to the pixels. The pixel sensing circuits are configured to respectively receive a photo current generated by each of the pixels. The pixels have different characteristic curves based on the pixel types, and at least one of an electrode structure parameter and an electrode bias of each of the pixels is determined according to a correspondingly characteristic curve. In addition, an image sensing method is also provided.

    Image sensor and manufacturing method thereof
    8.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10418392B2

    公开(公告)日：2019-09-17

    申请号：US16015307

    申请日：2018-06-22

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

    IPC: H01L27/146

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

    Image sensor and manufacturing method thereof
    9.
    发明授权
    Image sensor and manufacturing method thereof 有权

    公开(公告)号：US10038019B2

    公开(公告)日：2018-07-31

    申请号：US15394712

    申请日：2016-12-29

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Wen Yen ,  Yan-Rung Lin ,  Kai-Ping Chuang ,  Sheng-Min Yu

    IPC: H01L27/146

    CPC classification number: H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14683

    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

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