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公开(公告)号：US20240038522A1
公开(公告)日：2024-02-01
申请号：US18274597
申请日：2022-03-15
申请人： INFICON, Inc.
发明人： Norbert Mueller , Daniel Vanoni , Jochen Wagner
CPC分类号： H01J49/147 , H01J49/0031 , H01J49/145 , G01N30/7206 , G01N27/64
摘要： A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.
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公开(公告)号：US12106953B2
公开(公告)日：2024-10-01
申请号：US18274597
申请日：2022-03-15
申请人： INFICON, Inc.
发明人： Norbert Mueller , Daniel Vanoni , Jochen Wagner
CPC分类号： H01J49/147 , G01N27/64 , G01N30/7206 , H01J49/0031 , H01J49/145
摘要： A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.
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公开(公告)号：US20230215711A1
公开(公告)日：2023-07-06
申请号：US18017904
申请日：2022-05-31
申请人： INFICON, Inc.
发明人： Norbert Mueller
CPC分类号： H01J37/32981 , H01J49/147 , H01J37/32009 , H01J49/0031 , H01J37/3299
摘要： A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.
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公开(公告)号：US11784031B2
公开(公告)日：2023-10-10
申请号：US18017904
申请日：2022-05-31
申请人： INFICON, Inc.
发明人： Norbert Mueller
CPC分类号： H01J37/32981 , H01J37/32009 , H01J37/3299 , H01J49/0031 , H01J49/147
摘要： A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.
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