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公开(公告)号：US20130082340A1
公开(公告)日：2013-04-04
申请号：US13629659
申请日：2012-09-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Klaus Elian , Georg Ernst , Horst Theuss
CPC classification number: G01R33/072 , G01D5/147 , G01R33/06 , G01R33/091
Abstract: An apparatus may include a back-bias magnet; and a semiconductor chip element; wherein the semiconductor chip element has a sensor for measuring a magnetic field strength; and wherein a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element and wherein the contact side of the semiconductor chip element has one or more structures such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.
Abstract translation: 设备可以包括背偏磁体; 和半导体芯片元件; 其中所述半导体芯片元件具有用于测量磁场强度的传感器; 并且其中在所述背偏压磁体的接触侧和所述半导体芯片元件的接触侧上形成接触表面，并且其中所述半导体芯片元件的接触侧具有一个或多个结构，使得所述背面的接触表面 -bias磁体以对应于半导体芯片元件的结构的方式成形。
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公开(公告)号：US09446944B2
公开(公告)日：2016-09-20
申请号：US14693902
申请日：2015-04-23
Applicant: Infineon Technologies AG
Inventor： Georg Ernst , Horst Theuss
CPC classification number: B81B7/007 , B81B7/0048 , B81B2201/0264 , B81B2207/098 , B81C1/00301 , G01L1/148 , G01L1/16 , G01L19/0069 , G01L19/0084 , H01L23/49838 , H01L2224/16245 , H01L2224/32225 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
Abstract: In various embodiments, a sensor apparatus is provided. The sensor apparatus includes a sensor device having a plurality of electrical contacts; a housing having a plurality of sidewalls; and a metal carrier structure, which extends into the housing in a manner passing through two mutually opposite sidewalls from the plurality of sidewalls. The metal carrier structure is embodied in a resilient fashion at least in the direction of a sidewall through which the metal carrier structure extends. The sensor device having the plurality of electrical contacts is mounted in a resilient fashion on the metal carrier structure and is electrically conductively connected to the metal carrier structure by the plurality of contacts.
Abstract translation: 在各种实施例中，提供了传感器装置。 传感器装置包括具有多个电触点的传感器装置; 壳体，具有多个侧壁; 以及金属载体结构，其以从多个侧壁穿过两个相互相对的侧壁的方式延伸到壳体中。 金属载体结构至少在金属载体结构延伸的侧壁的方向上以弹性方式实施。 具有多个电触头的传感器装置以弹性方式安装在金属载体结构上，并且通过多个触点与导电连接到金属载体结构。
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公开(公告)号：US09164156B2
公开(公告)日：2015-10-20
申请号：US13629659
申请日：2012-09-28
Applicant: Infineon Technologies AG
Inventor： Klaus Elian , Georg Ernst , Horst Theuss
CPC classification number: G01R33/072 , G01D5/147 , G01R33/06 , G01R33/091
Abstract: An apparatus may include a back-bias magnet; and a semiconductor chip element; wherein the semiconductor chip element has a sensor for measuring a magnetic field strength; and wherein a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element and wherein the contact side of the semiconductor chip element has one or more structures such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.
Abstract translation: 设备可以包括背偏磁体; 和半导体芯片元件; 其中所述半导体芯片元件具有用于测量磁场强度的传感器; 并且其中在所述背偏压磁体的接触侧和所述半导体芯片元件的接触侧上形成接触表面，并且其中所述半导体芯片元件的接触侧具有一个或多个结构，使得所述背面的接触表面 -bias磁体以对应于半导体芯片元件的结构的方式成形。
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