METHOD OF DESIGNING THIN FILM TRANSISTOR
    1.
    发明公开

    公开(公告)号:US20240005077A1

    公开(公告)日:2024-01-04

    申请号:US18250461

    申请日:2020-10-30

    IPC分类号: G06F30/39 G16C60/00

    摘要: A method of designing a thin film transistor device, including: calculating characteristic parameters of searched materials; screening the materials according to a characteristic parameter threshold to obtain first active layer materials; simulating the first active layer material as an active layer material in a thin film transistor device model to obtain a device characteristic of the thin film transistor device; screening the first active layer materials according to a device characteristic threshold to obtain second active layer materials; taking the second active layer material as the active layer material of the thin film transistor device to perform an experiment; and selecting another second active layer material to perform the experiment once again when an experiment result does not meet a preset requirement, and a design of the thin film transistor device is completed until the experiment result meets the preset requirement.