公开(公告)号：US20200007135A1

公开(公告)日：2020-01-02

申请号：US16024052

申请日：2018-06-29

Applicant: INTEL CORPORATION

Inventor： ABHISHEK A. SHARMA ,  RAVI PILLARISETTY ,  CHARLES KUO ,  WILLY RACHMADY

IPC: H03M1/00 ,  H03M1/74

Abstract: Digital-to-analog converters (DACs) having a multiple-gate (multi-gate) transistor-like structure are disclosed herein. The DAC structures have a similar structure to a transistor (e.g., a MOSFET) and include source and drain regions. However, instead of employing only one gate between the source and drain regions, multiple distinct gates are employed. Each distinct gate can represent a bit for the DAC and can include different gate lengths to enable providing different current values, and thus, unique outputs. Further, N number of inputs can be applied to N number of gates employed by the DAC. The DAC structure may be configured such that the longest gate controls the LSB of the DAC and the shortest gate controls the MSB, or vice versa. In some cases, the multi-gate DAC employs high-injection velocity materials that enable compact design and routing, such as InGaAs, InP, SiGe, and Ge, to provide some examples.