公开(公告)号：US11754861B2

公开(公告)日：2023-09-12

申请号：US17360160

申请日：2021-06-28

Applicant: INTEL CORPORATION

Inventor： Taehwan Kim ,  Ganesh Balamurugan ,  Hao Li ,  Hasitha Jayatilleka

IPC: G02F1/01

CPC classification number: G02F1/0136

Abstract: Embodiments include apparatuses, methods, and systems including a dynamic polarization controller (DPC) to receive a first light beam and a second light beam, to adjust a rotation of a state of polarization (SOP) of the first light beam and the second light beam to generate a third light beam and a fourth light beam, under the control of a first control signal, a second control signal, and a third control signal. The first control signal may be related to a phase difference between the third light beam and the fourth light beam, the second control signal may be related to an intensity difference between the third light beam and the fourth light beam, and the third control signal may be related to a rotation of a SOP of the third light beam and the fourth light beam. Other embodiments may also be described and claimed.

公开(公告)号：US11126018B2

公开(公告)日：2021-09-21

申请号：US15834954

申请日：2017-12-07

Applicant: INTEL CORPORATION

Inventor： Taehwan Kim ,  Ganesh Balamurugan ,  Hao Li ,  Hasitha Jayatilleka

IPC: G02F1/01

Abstract: Embodiments include apparatuses, methods, and systems including a dynamic polarization controller (DPC) to receive a first light beam and a second light beam, to adjust a rotation of a state of polarization (SOP) of the first light beam and the second light beam to generate a third light beam and a fourth light beam, under the control of a first control signal, a second control signal, and a third control signal. The first control signal may be related to a phase difference between the third light beam and the fourth light beam, the second control signal may be related to an intensity difference between the third light beam and the fourth light beam, and the third control signal may be related to a rotation of a SOP of the third light beam and the fourth light beam. Other embodiments may also be described and claimed.

公开(公告)号：US11175451B2

公开(公告)日：2021-11-16

申请号：US16733167

申请日：2020-01-02

Applicant: Intel Corporation

Inventor： Hasitha Jayatilleka ,  Harel Frish ,  Ranjeet Kumar ,  Haisheng Rong ,  John Heck

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/134

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

公开(公告)号：US20200150344A1

公开(公告)日：2020-05-14

申请号：US16733167

申请日：2020-01-02

Applicant: Intel Corporation

Inventor： Hasitha Jayatilleka ,  Harel Frish ,  Ranjeet Kumar ,  Haisheng Rong ,  John Heck

IPC: G02B6/122

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.