公开(公告)号：US20200175908A1

公开(公告)日：2020-06-04

申请号：US16787499

申请日：2020-02-11

Applicant: INTEL CORPORATION

Inventor： KHALED AHMED ,  KUNJAL PARIKH

IPC: G09G3/20 ,  H01L27/12 ,  G09G3/30 ,  H01L29/66 ,  H01L27/15 ,  H01L29/786 ,  H01L29/24 ,  H01L29/20 ,  G09G3/32

Abstract: A micro display, which includes LEDs and TFTs of a TFT electronic control circuit for controlling the LEDs, is produced monolithically on a silicon, silicon carbide, or sapphire wafer. The display includes red, green, and blue micro LEDs, and electronic control circuits include TFTs with Indium gallium zinc oxide (IGZO) channels or Indium phosphide (InP) channels. The TFTs are formed above the LEDs and laterally removed from the LEDs and paths of light emissions from the plurality of LEDs to prevent light blocking by the TFTs.

公开(公告)号：US20180182831A1

公开(公告)日：2018-06-28

申请号：US15390366

申请日：2016-12-23

Applicant: INTEL CORPORATION

Inventor： KHALED AHMED ,  PRASHANT MAJHI ,  KUNJAL PARIKH

IPC: H01L27/32 ,  H01L27/12

Abstract: A thin film transistor (TFT) to control a light emitting diode (LED) or an organic light emitting diode (OLED) includes a channel region configured as a saddle channel extending between the drain region and the source region of the TFT. The saddle channel is formed by deposition of channel material on a fin structure, and the contour of the saddle channel is defined by the contour of the fin structure. Deposition of the channel material for the saddle channel may be performed by: (i) atomic layer deposition (ALD) of amorphous silicon; (ii) ALD of amorphous silicon followed by annealing to form polycrystalline silicon; or (iii) deposition of indium gallium zinc oxide (IGZO) material by one of ALD, plasma-enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), or plasma-enhanced chemical vapor deposition (PECVD).

公开(公告)号：US20180182275A1

公开(公告)日：2018-06-28

申请号：US15390371

申请日：2016-12-23

Applicant: INTEL CORPORATION

Inventor： KHALED AHMED ,  KUNJAL PARIKH

IPC: G09G3/20 ,  H01L29/786 ,  H01L27/15 ,  H01L29/24 ,  H01L29/20 ,  H01L29/66 ,  H01L21/02 ,  G09G3/30

CPC classification number: G09G3/2003 ,  G09G3/30 ,  G09G3/32 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G2330/023 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/15 ,  H01L27/156 ,  H01L29/20 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/7869 ,  H01L33/24

Abstract: A micro display, which includes LEDs and TFTs of a TFT electronic control circuit for controlling the LEDs, is produced monolithically on a silicon, silicon carbide, or sapphire wafer. The display includes red, green, and blue micro LEDs, and electronic control circuits include TFTs with Indium gallium zinc oxide (IGZO) channels or Indium phosphide (InP) channels. The TFTs are formed above the LEDs and laterally removed from the LEDs and paths of light emissions from the plurality of LEDs to prevent light blocking by the TFTs.