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公开(公告)号:US10692757B2
公开(公告)日:2020-06-23
申请号:US15568791
申请日:2015-05-28
Applicant: Intel Corporation
Inventor: Marie Krysak , Robert Lindsey Bristol , Paul Anton Nyhus , Michael J. Leeson
IPC: G03F7/004 , H01L21/768 , H01L21/311 , H01L21/027 , G03F7/20 , G03F7/038 , G03F7/039 , G03F7/095 , C08F212/32 , C08F212/14 , G03F7/32 , G03F7/38 , H01L23/498
Abstract: Embodiments of the invention include photoresist materials and methods of patterning photoresist materials. In an embodiment a photoresist material comprises a plurality of molecular glasses (MGs). In an embodiment, a glass transition temperature Tg of the photoresist material is less than an activation temperature needed to deblock blocking groups from the MGs. Embodiments include a method of patterning a photoresist material that comprises exposing the photoresist material with ultraviolet radiation. The method may also comprise, performing a first post exposure bake at a first temperature, that is less than the activation temperature needed to deblock blocking groups from the MGs, and performing a second post exposure bake at a second temperature that is approximately equal to or greater than the activation temperature needed to deblock blocking groups from the MGs.
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公开(公告)号:US10269622B2
公开(公告)日:2019-04-23
申请号:US15529479
申请日:2014-12-24
Applicant: INTEL CORPORATION
Inventor: Rami Hourani , Michael J. Leeson , Todd R. Younkin , Eungnak Han , Robert L. Bristol
IPC: H01L21/768 , H01L23/522 , H01L23/528 , H01L23/532 , G03F7/00 , G03F7/16 , H01L21/027
Abstract: Embodiments of the invention include microelectronic devices and methods of forming such devices. In an embodiment, a microelectronic device, includes one or more pre-patterned features formed into a interconnect layer, with a conformal barrier layer formed over the first wall, and the second wall of one or more of the pre-patterned features. A photoresist layer may formed over the barrier layer and within one or more of the pre-patterned features and a conductive via may be formed in at least one of the pre-patterned features.
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