公开(公告)号：US20250112122A1

公开(公告)日：2025-04-03

申请号：US18477906

申请日：2023-09-29

Applicant: INTEL CORPORATION

Inventor： Kevin P. O'Brien ,  Paul Gutwin ,  David L. Kencke ,  Mahmut Sami Kavrik ,  Daniel Chanemougame ,  Ashish Verma Penumatcha ,  Carl Hugo Naylor ,  Kirby Maxey ,  Uygar E. Avci ,  Tristan A. Tronic ,  Chelsey Dorow ,  Andrey Vyatskikh ,  Rachel A. Steinhardt ,  Chia-Ching Lin ,  Chi-Yin Cheng ,  Yu-Jin Chen ,  Tyrone Wilson

IPC: H01L23/48 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/18 ,  H01L29/423 ,  H01L29/78

Abstract: Integrated circuit (IC) devices and systems with backside power gates, and methods of forming the same, are disclosed herein. In one embodiment, an integrated circuit die includes a device layer with one or more transistors, a first interconnect over the device layer, a second interconnect under the device layer, and one or more power gates under the device layer.