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    Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer
    3.
    发明授权
    Techniques for forming spin-transfer torque memory having a dot-contacted free magnetic layer 有权

    公开(公告)号：US10707409B2

    公开(公告)日：2020-07-07

    申请号：US15882546

    申请日：2018-01-29

    Applicant: INTEL CORPORATION

    Inventor： Charles C. Kuo ,  Kaan Oguz ,  Brian S. Doyle ,  Mark L. Doczy ,  David L. Kencke ,  Satyarth Suri ,  Robert S. Chau

    IPC: H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L43/12

    Abstract: Techniques are disclosed for fabricating a self-aligned spin-transfer torque memory (STTM) device with a dot-contacted free magnetic layer. In some embodiments, the disclosed STTM device includes a first dielectric spacer covering sidewalls of an electrically conductive hardmask layer that is patterned to provide an electronic contact for the STTM's free magnetic layer. The hardmask contact can be narrower than the free magnetic layer. The first dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer. In some embodiments, the STTM further includes an optional second dielectric spacer covering sidewalls of its free magnetic layer. The second dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer and may serve, at least in part, to protect the sidewalls of the free magnetic layer from redepositing of etch byproducts during such patterning, thereby preventing electrical shorting between the fixed magnetic layer and the free magnetic layer.

    TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CONTACTED FREE MAGNETIC LAYER
    5.
    发明申请
    TECHNIQUES FOR FORMING SPIN-TRANSFER TORQUE MEMORY HAVING A DOT-CONTACTED FREE MAGNETIC LAYER 审中-公开

    公开(公告)号：US20180166625A1

    公开(公告)日：2018-06-14

    申请号：US15882546

    申请日：2018-01-29

    Applicant: INTEL CORPORATION

    Inventor： Charles C. Kuo ,  Kaan Oguz ,  Brian S. Doyle ,  Mark L. Doczy ,  David L. Kencke ,  Satyarth Suri ,  Robert S. Chau

    IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/12

    Abstract: Techniques are disclosed for fabricating a self-aligned spin-transfer torque memory (STTM) device with a dot-contacted free magnetic layer. In some embodiments, the disclosed STTM device includes a first dielectric spacer covering sidewalls of an electrically conductive hardmask layer that is patterned to provide an electronic contact for the STTM's free magnetic layer. The hardmask contact can be narrower than the free magnetic layer. The first dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer. In some embodiments, the STTM further includes an optional second dielectric spacer covering sidewalls of its free magnetic layer. The second dielectric spacer can be utilized in patterning the STTM's fixed magnetic layer and may serve, at least in part, to protect the sidewalls of the free magnetic layer from redepositing of etch byproducts during such patterning, thereby preventing electrical shorting between the fixed magnetic layer and the free magnetic layer.

    High stability spintronic memory
    8.
    发明授权
    High stability spintronic memory 有权
    高度稳定的自旋电记忆

    公开(公告)号：US09231194B2

    公开(公告)日：2016-01-05

    申请号：US13996603

    申请日：2013-03-28

    Applicant: Intel Corporation

    Inventor： Charles C. Kuo ,  Kaan Oguz ,  Brian S. Doyle ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  David L. Kencke ,  Robert S. Chau

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08 ,  H01F10/32

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/065 ,  H01L43/08 ,  H01L43/12 ,  H01L43/14

    Abstract: An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less stable memory having a MTJ with only a single oxide layer. Other embodiments are described herein.

    Abstract translation: 实施例包括在自由层和固定层之间包括自由磁性层，固定磁性层和隧道势垒的磁性隧道结（MTJ）; 所述隧道势垒直接接触所述自由层的第一侧; 和直接接触自由层的第二面的氧化物层; 其中所述隧道势垒包括氧化物并且具有第一电阻区域（RA）产物，并且所述氧化物层具有低于所述第一RA产物的第二RA产物。 MTJ可以包括在垂直旋转扭矩传递存储器中。 隧道势垒和氧化物层形成具有高稳定性的存储器，RA产物没有实质上高于具有仅具有单一氧化物层的MTJ的较不稳定的存储器。 本文描述了其它实施例。

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