公开(公告)号：US09112095B2

公开(公告)日：2015-08-18

申请号：US13716009

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20140170803A1

公开(公告)日：2014-06-19

申请号：US13716009

申请日：2012-12-14

Applicant: INTERMOLECULAR, INC.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。