公开(公告)号：US09112095B2

公开(公告)日：2015-08-18

申请号：US13716009

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L21/00 ,  H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20140170803A1

公开(公告)日：2014-06-19

申请号：US13716009

申请日：2012-12-14

Applicant: INTERMOLECULAR, INC.

Inventor： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

Abstract: In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

Abstract translation: 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US20130313566A1

公开(公告)日：2013-11-28

申请号：US13957380

申请日：2013-08-01

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Boris Borisov ,  Thai Cheng Chua ,  Sandeep Nijhawan ,  Yoga Saripalli

IPC: H01L21/02

CPC classification number: H01L21/02436 ,  B01J2219/0059 ,  B01J2219/00756 ,  C23C16/303 ,  C23C16/45534 ,  C23C16/45551 ,  C30B25/14 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262

Abstract: Methods and apparatus for depositing thin films incorporating the use of a surfactant are described. Methods and apparatuses include a deposition process and system comprising multiple isolated processing regions which enables rapid repetition of sub-monolayer deposition of thin films. The use of surfactants allows the deposition of high quality epitaxial films at lower temperatures having low values of surface roughness. The deposition of Group III-V thin films such as GaN is used as an example.

Abstract translation: 描述了使用表面活性剂沉积薄膜的方法和装置。 方法和装置包括沉积过程和系统，其包括多个分离的处理区域，其能够快速重复薄膜的亚单层沉积。 表面活性剂的使用允许在较低温度下沉积具有低表面粗糙度值的高质量外延膜。 使用诸如GaN的III-V族薄膜的沉积作为示例。

公开(公告)号：US20130118404A1

公开(公告)日：2013-05-16

申请号：US13714814

申请日：2012-12-14

Applicant: Intermolecular, Inc.

Inventor： Philip A. Kraus ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC: H01L21/205

CPC classification number: H01L21/2056 ,  C23C16/303 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45551 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/1016

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract translation: 描述了沉积薄膜的方法和装置。 在实施例中，提供了用于外延薄膜形成的系统和方法，包括用于形成二元化合物外延薄膜的系统和方法。 可以使用本发明实施例的方法和系统来形成直接带隙半导体二元化合物外延薄膜，例如GaN，InN和AlN，以及这些化合物的混合合金，例如（In，Ga）N ，（Al，Ga）N，（In，Ga，Al）N。 方法和装置包括能够快速重复薄膜的亚单层沉积的多级沉积工艺和系统。