公开(公告)号：US20200312912A1

公开(公告)日：2020-10-01

申请号：US16368065

申请日：2019-03-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： REINALDO VEGA ,  TAKASHI ANDO ,  HARI MALLELA ,  Li-Wen Hung

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

Abstract: A stacked resistive random access memory (ReRAM) structure is provided. The stacked ReRAM structure includes a channel, a ReRAM cell sub-structure and a contact via sub-structure. The ReRAM cell structure includes ReRAM cell, drain, gate and source layers, which are insulated from one another and respectively disposed in operative contact with the channel. The contact via sub-structures includes first, second, third and fourth contact vias, which are separate from one another. The first contact via is disposed in exclusive operative contact with the ReRAM cell layer. The second contact via is disposed in exclusive operative contact with the drain layer. The third contact via is disposed in exclusive operative contact with the gate layer. The fourth contact via is disposed in exclusive operative contact with the source layer.